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Semiconductor structure having low resistance and method of manufacturing same

  • US 20040238876A1
  • Filed: 05/29/2003
  • Published: 12/02/2004
  • Est. Priority Date: 05/29/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a dielectric layer formed on a semiconductor substrate;

    a polysilicon layer formed on the dielectric layer;

    an interface-reaction preventing layer formed on the polysilicon layer, the interface-reaction preventing layer structured to prevent a reaction between the polysilicon layer and a material layer subsequently formed on the interface-reaction preventing layer;

    a barrier layer formed on the interface-reaction preventing layer; and

    a metal layer formed on the barrier layer.

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