Semiconductor device and method of manufacturing the same
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film provided on the semiconductor substrate;
a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in the height direction of the non-volatile memory cell in channel width or length direction there, and being thinnest between a region above the bottom surface of the floating gate electrode and a region below the upper surface thereof;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film provided on the semiconductor substrate, a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in the height direction of the non-volatile memory cell in channel width or length direction there, and being thinnest between a region above the bottom surface of the floating gate electrode and a region below the upper surface thereof, a control gate electrode above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
-
Citations
20 Claims
-
1. A semiconductor device comprising:
-
a semiconductor substrate; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film provided on the semiconductor substrate;
a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in the height direction of the non-volatile memory cell in channel width or length direction there, and being thinnest between a region above the bottom surface of the floating gate electrode and a region below the upper surface thereof;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12)
-
-
10. A semiconductor device comprising:
-
a semiconductor substrate; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film provided on the semiconductor substrate;
a floating gate electrode provided on the tunnel insulating film;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode, the interelectrode insulating film including a first dielectric region and a second dielectric region having permittivity lower than the first dielectric region, the second dielectric region being provided on a edge of the first dielectric region in the channel length direction of the non-volatile memory cell.
-
-
13. A semiconductor device comprising:
-
a semiconductor substrate; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film provided on the semiconductor substrate;
a floating gate electrode provided on the tunnel insulating film, and including at least one of an empty space region and insulator region;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
-
-
14. A method of manufacturing semiconductor device comprising:
- a semiconductor substrate;
an isolation region provided on a surface of the semiconductor and including an isolation trench; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film;
a floating gate electrode provided on the tunnel insulating film;
a control gate electrode above the floating gate electrode; and
an inter-electrode insulating film provided between the control gate electrode and the floating gate electrode,the method comprising;
forming an insulating film to be processed into the tunnel insulating film on the semiconductor substrate;
forming a semiconductor film to be processed into the floating gate electrode on the insulating film, the semiconductor film including a side where oxidation rate is the highest between a region above a bottom surface of the semiconductor film and a region below an upper surface thereof;
etching the semiconductor film, the insulating film and the semiconductor substrate, and forming the isolation trench;
oxidizing a surface of the semiconductor film exposed in a process of forming the isolation trench, and forming an oxide film on the surface of the semiconductor film; and
removing the oxide film. - View Dependent Claims (15)
- a semiconductor substrate;
-
16. A method of manufacturing a semiconductor device comprising:
- a semiconductor substrate;
an isolation region provided on a surface of the semiconductor and including an isolation trench; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film;
a floating gate electrode provided on the tunnel insulating film;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode,the method comprising;
forming an insulating film to be processed into the tunnel insulating film and a semiconductor film to be processed into the floating gate electrode on the semiconductor substrate successively;
etching the semiconductor film, the insulating film and the semiconductor substrate, and forming the isolation trench;
forming an isolation film in the isolation trench;
forming a first dielectric region making a part of the interelectrode insulating film and the control gate electrode on a region including the isolation film and the semiconductor film successively; and
forming a second dielectric region having permittivity lower than the first dielectric region and making a part of the interelectrode insulating film in an empty space region formed by etching an exposed surface of the first dielectric region by a predetermined amount in the lateral direction.
- a semiconductor substrate;
-
17. A method of manufacturing a semiconductor device comprising:
- a semiconductor substrate;
an isolation region provided on a surface of the semiconductor and including an isolation trench; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film;
a floating gate electrode provided on the tunnel insulating film, and including at least one of an empty space region and insulator region;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode,the method comprising;
forming an insulating film to be processed into the tunnel insulating film, a first semiconductor film making a part of the floating gate electrode, and a polishing stopper film on the semiconductor substrate successively;
etching the polishing stopper film, the first semiconductor film, the insulating film and the semiconductor substrate, forming the isolation trench;
forming an isolation film on a region including the isolation trench and the polishing stopper film so that the isolation trench is filled;
polishing the surface of the isolation trench using the polishing stopper film as a stopper, and removing the isolation film outside the isolation trench;
removing the polishing stopper film; and
forming a second semiconductor film making a part of the floating gate electrode and including an empty space therein on a region including the isolation film and the first semiconductor film to fill a concave portion formed by removing the polishing stopper film. - View Dependent Claims (18, 19, 20)
- a semiconductor substrate;
Specification