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Semiconductor device and method of manufacturing the same

  • US 20040238881A1
  • Filed: 02/04/2004
  • Published: 12/02/2004
  • Est. Priority Date: 05/26/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate; and

    a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;

    a tunnel insulating film provided on the semiconductor substrate;

    a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in the height direction of the non-volatile memory cell in channel width or length direction there, and being thinnest between a region above the bottom surface of the floating gate electrode and a region below the upper surface thereof;

    a control gate electrode above the floating gate electrode; and

    an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.

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