High-quality SGOI by oxidation near the alloy melting temperature
First Claim
1. A method of producing a SiGe-on-insulator substrate material comprising the steps of:
- forming a Ge-containing layer on a surface of a first single crystal Si layer, said first single crystal Si layer is present atop a barrier layer that is resistant to Ge diffusion; and
heating said layers to a temperature at or near the melting point of a selected SiGe alloy which causes a substantial reduction in strained relaxation defects while permitting interdiffusion of Ge throughout said first single crystal Si layer and said Ge-containing layer thereby forming a low-defect, substantially relaxed, single crystal SiGe layer atop said barrier layer, said temperature being at or above that which limits generation of stacking fault defects.
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Abstract
A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to Ge diffusion. A heating step is then performed at a temperature that approaches the melting point of the final SiGe alloy and retards the formation of stacking fault defects while retaining Ge. The heating step permits interdiffusion of Ge throughout the first single crystal Si layer and the Ge-containing layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Moreover, because the heating step is carried out at a temperature that approaches the melting point of the final SiGe alloy, defects that persist in the single crystal SiGe layer as a result of relaxation are efficiently annihilated therefrom.
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Citations
47 Claims
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1. A method of producing a SiGe-on-insulator substrate material comprising the steps of:
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forming a Ge-containing layer on a surface of a first single crystal Si layer, said first single crystal Si layer is present atop a barrier layer that is resistant to Ge diffusion; and
heating said layers to a temperature at or near the melting point of a selected SiGe alloy which causes a substantial reduction in strained relaxation defects while permitting interdiffusion of Ge throughout said first single crystal Si layer and said Ge-containing layer thereby forming a low-defect, substantially relaxed, single crystal SiGe layer atop said barrier layer, said temperature being at or above that which limits generation of stacking fault defects. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A substrate material comprising:
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a Si-containing substrate;
an insulating region that is resistant to Ge diffusion present atop said Si-containing substrate, said insulating region comprising a crystalline or non-crystalline oxide or a crystalline or non-crystalline nitride; and
a substantially relaxed SiGe layer present atop said insulating region, wherein said substantially relaxed SiGe layer has a thickness of about 2000 nm or less and a defect density of about 107 defects/cm2 or less. - View Dependent Claims (34, 35, 37, 38)
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36. (Cancelled)
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39. A heterostructure comprising:
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a Si-containing substrate;
an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate, said insulating region comprising a crystalline or non-crystalline oxide or a crystalline or non-crystalline nitride;
a substantially relaxed SiGe layer present atop the insulating region, wherein the substantially relaxed SiGe layer has a thickness of about 2000 nm or less and a defect density of about 107 defects/cm2 or less; and
a strained Si layer formed atop the substantially relaxed SiGe layer. - View Dependent Claims (40, 41, 43, 44, 45, 46, 47)
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42. (Cancelled)
Specification