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High-quality SGOI by oxidation near the alloy melting temperature

  • US 20040238885A1
  • Filed: 05/30/2003
  • Published: 12/02/2004
  • Est. Priority Date: 05/30/2003
  • Status: Active Grant
First Claim
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1. A method of producing a SiGe-on-insulator substrate material comprising the steps of:

  • forming a Ge-containing layer on a surface of a first single crystal Si layer, said first single crystal Si layer is present atop a barrier layer that is resistant to Ge diffusion; and

    heating said layers to a temperature at or near the melting point of a selected SiGe alloy which causes a substantial reduction in strained relaxation defects while permitting interdiffusion of Ge throughout said first single crystal Si layer and said Ge-containing layer thereby forming a low-defect, substantially relaxed, single crystal SiGe layer atop said barrier layer, said temperature being at or above that which limits generation of stacking fault defects.

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