Forming a semiconductor device feature using acquired parameters

• US 20040241891A1
• Filed: 05/19/2004
• Published: 12/02/2004
• Est. Priority Date: 02/28/2003
• Status: Abandoned Application

• Current Assignee: Dane L. Scott, Kevin J. Vasquez
• Original Assignee: Dane L. Scott, Kevin J. Vasquez
• Inventors: Vasquez, Kevin J., Scott, Dane L.
• Application Number:
  US10/848,894
• Publication Number:
  US 20040241891A1
• Time in Patent Office: Days
• US Class Current: 438/17
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

In one embodiment of the present invention, a method includes acquiring parameters for a desired feature of a semiconductor device; determining a data array using the parameters; and forming the desired feature using the data array. The desired feature in one embodiment may be a backside trench.

Claims

1. A method comprising:

acquiring parameters for a desired feature of a semiconductor device;

determining a data array using the parameters; and

forming the desired feature using the data array.

2. The method of claim 1, further comprising using a focused ion beam tool to form the desired feature.

3. The method of claim 1, further comprising performing a plurality of tool iterations to form the desired feature, the plurality of tool iterations greater than ten.

4. The method of claim 3, wherein determining the data array comprises calculating dimensions for each of the tool iterations based on a primary pattern size.

5. The method of claim 4, wherein the plurality of tool iterations form a trench having a non-linear profile on a backside of a substrate.

6. The method of claim 5, further comprising forming a metal layer over the non-linear profile.

7. The method of claim 1, further comprising forming a stepless silicon trench as the desired feature.

8. The method of claim 2, further comprising acquiring the parameters via a user input device associated with the focused ion beam tool.

9. A method comprising:

calculating a plurality of patters corresponding to a desired feature of a semiconductor device from a set of parameters; and

forming the desired feature using the plurality of patterns.

10. The method of claim 9, further comprising forming a trench on a backside of a substrate supporting the semiconductor device as the desired feature.

11. The method of claim 9, wherein the set of parameters comprise dimensions of a trench and at least one angle relating to the trench.

12. The method of claim 9, wherein calculating the plurality of patterns comprises calculating a plurality of box patterns and wherein the set of parameters comprises a primary box size.

13. The method of claim 9, further comprising forming the desired feature using a focused ion beam tool.

14. The method of claim 13, further comprising acquiring the set of parameters using an input device associated with the focused ion beam tool.

15-20. -20. (Canceled)