Conductive etch stop for etching a sacrificial layer
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Abstract
In one embodiment, a micro device is formed by depositing a sacrificial layer over a metallic electrode, forming a moveable structure over the sacrificial layer, and then etching the sacrificial layer with a noble gas fluoride. Because the metallic electrode is comprised of a metallic material that also serves as an etch stop in the sacrificial layer etch, charge does not appreciably build up in the metallic electrode. This helps stabilize the driving characteristic of the moveable structure. In one embodiment, the moveable structure is a ribbon in a light modulator.
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Citations
32 Claims
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1-10. -10. (canceled)
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11. An intermediate micro device structure comprising:
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a silicon layer over a first metallic electrode, the first metallic electrode serving as an etch stop in a subsequent isotropic etch of the silicon layer to protect an underlying isolation layer; and
a resilient structure over the silicon layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 21)
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18-20. -20. (canceled)
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22. An intermediate micro device structure comprising:
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a metallic electrode over an isolation layer;
a sacrificial layer over the metallic electrode;
a ribbon structure over the sacrificial layer;
wherein the metallic electrode serves as an etch stop in an etching of the sacrificial layer to form an air gap between the metallic electrode and the ribbon structure. - View Dependent Claims (23, 24, 25, 26, 27)
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28. An intermediate micro device structure comprising:
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a ribbon structure having a reflective top electrode;
a bottom electrode being configured to work in conjunction with the top electrode to modulate incident light;
a sacrificial layer between the ribbon structure and a bottom electrode;
wherein the bottom electrode serves as an etch stop in an etching of the sacrificial layer to form an air gap between the ribbon structure and the bottom electrode. - View Dependent Claims (29, 30, 31, 32)
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Specification