Optical semiconductor device and method of manufacturing same

• US 20040245530A1
• Filed: 03/30/2004
• Published: 12/09/2004
• Est. Priority Date: 06/05/2003
• Status: Abandoned Application

• Current Assignee: Kanto Sanyo Semiconductors Company Limited (Panasonic Holdings Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Kanto Sanyo Semiconductors Company Limited (Panasonic Holdings Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Kameyama, Koujiro, Mita, Kiyoshi
• Application Number:
  US10/812,454
• Publication Number:
  US 20040245530A1
• Time in Patent Office: Days
• US Class Current: 257/80
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/0558 being stacked
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 : the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 27/14618 : Containers
• CPC Class Codes: H01L 27/14683 : Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin

Abstract

An optical semiconductor device of which the moisture resistance and the like are improved and the manufacturing method thereof are provided. An optical semiconductor device of the embodiment is configured to include an optical semiconductor element on a surface of which a circuit portion including a light-receiving or light-emitting element is formed; a terminal portion which is provided on a back of the optical semiconductor element and electrically connected with the circuit portion; a covering layer which covers the surface of the optical semiconductor element and is made of a transparent material; and sealing resin which covers side faces of the covering layer and of the optical semiconductor element. The circuit portion and the terminal portion may be connected by a rewiring pattern.

Claims

1. An optical semiconductor device, comprising:

an optical semiconductor element having a circuit portion including any one of a light-receiving element and a light-emitting element on a surface thereof;

a terminal portion which is provided on a back of the optical semiconductor element and electrically connected with the circuit portion;

a covering layer which covers the surface of the optical semiconductor element and is made of a transparent material; and

sealing resin which covers side surfaces of the optical semiconductor element.

2. The device of claim 1, wherein the back surface of the optical semiconductor element is covered with the sealing resin, and the terminal portion is exposed from the sealing resin.

3. The device of claim 1, wherein the back surface of the optical semiconductor element is covered with an insulating layer, and the terminal portion is formed on a back of the insulating layer.

4. The device of claim 1, wherein the circuit portion of the optical semiconductor element and the terminal portion are electrically connected by a penetrating electrode provided in the optical semiconductor element.

5. The device of claim 1, wherein the circuit portion of the optical semiconductor element and the terminal portion are connected through a rewiring pattern elongating along a side surface portion of the optical semiconductor element, and the rewiring pattern is covered with the sealing resin.

6. The device of claim 1, wherein a bump electrode is formed on a back of the terminal portion.

7. The device of claim 1, wherein each of the side surfaces of the optical semiconductor element is formed to be an inclined surface.

8. The device of claim 1, wherein side surfaces of the covering layer is covered with the sealing resin.

9. A method of manufacturing an optical semiconductor device, comprising:

preparing a wafer having a plurality of circuit portions each including any one of a light-receiving element and a light-emitting element on a surface thereof;

separating the wafer into individual optical semiconductor elements by forming separating grooves from a back surface of the wafer so that the wafer is separated;

providing terminal portions electrically connected with the circuit portions on back surface of the optical semiconductor elements;

forming sealing resin so that at least the separating grooves are filled with the sealing resin; and

separating individual optical semiconductor devices from each other along the separating grooves.

10. The method of claim 9, further comprising the step of adhering a transparent covering layer onto the surface of the wafer so that the circuit portions are covered with the covering layer.

11. The method of claim 10, wherein after the wafer with a covering layer facing down is adhered onto a sheet, the separating grooves are formed.

12. The method of claim 10, wherein the separating grooves are formed so that both the wafer and the covering layer are divided, and side surfaces of the optical semiconductor elements and divided portions of the covering layer are covered with the sealing resin with which the separating grooves are filled.

13. The method of claim 9, wherein the separating grooves are formed so that the covering layer is partly divided, and side surfaces of the optical semiconductor elements and of partly divided portions of the covering layer are covered with the sealing resin with which the separating grooves are filled.

14. The method of claim 9, wherein the circuit portions of the optical semiconductor elements and the terminal portions are electrically connected by penetrating electrodes provided in the optical semiconductor elements.

15. The method of claim 9, wherein the circuit portions of the optical semiconductor elements and the terminal portions are connected through rewiring patterns elongating along side surface portions of the optical semiconductor elements, and the rewiring patterns are covered with the sealing resin.

16. The method of claim 15, wherein the rewiring patterns are formed on the side surface portions, each side surface portion being formed to be an inclined surface.

17. The method of claim 9, wherein the sealing resin is formed to cover the terminal portions and the back of the wafer, and the terminal portions are exposed by abrading the sealing resin.