Method of fabricating vertical structure compound semiconductor devices
First Claim
1. A method of fabricating a vertical structure opto-electronic device, comprising the step of:
- fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate;
removing the substrate using a laser lift-off process; and
fabricating a metal support structure in place of the substrate.
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Abstract
A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspect, the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.
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Citations
23 Claims
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1. A method of fabricating a vertical structure opto-electronic device, comprising the step of:
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fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate;
removing the substrate using a laser lift-off process; and
fabricating a metal support structure in place of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A vertical structure opto-electronic device, comprising a plurality of layers including:
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a GaN-based light emitting diode and at one contact in proximity to the top thereof;
an ITO (Indium Tin Oxide) contact layer disposed below the fabricating a vertical structure laser diode on a crystal substrate;
an buffer layer including Au adjacent the ITO layer; and
a support layer including copper adjacent the Au layer. - View Dependent Claims (23)
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Specification