Partially processed tunnel junction control element
First Claim
Patent Images
1. A system, comprising:
- a memory storage element;
a tunnel junction control element that is partially-processed; and
a first electrode located between the memory storage element and the tunnel junction control element.
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Abstract
A memory system, including a first electrode, a memory storage element, and a control element. The control element having a breakdown voltage. The breakdown voltage is increased by partially-processing the control element. In one aspect, the partial-processing results by processing the control element for a briefer duration than the memory storage element. In another aspect, the partial-processing results by forming the control element from a plurality of layers, some of the plurality of layers are unprocessed while other ones of the plurality of layers are fully processed.
24 Citations
44 Claims
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1. A system, comprising:
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a memory storage element;
a tunnel junction control element that is partially-processed; and
a first electrode located between the memory storage element and the tunnel junction control element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method, comprising:
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depositing a first electrode on a substrate;
forming a tunnel junction control element on the first electrode by partially processing the first electrode;
creating a second electrode;
forming a memory element on the second electrode by fully processing the second electrode; and
creating a third electrode. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A memory structure comprising:
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a plurality of layers of memory cells;
each memory cell of the plurality of layers of memory cells including a first electrode, a second electrode, a third electrode, a memory storage element disposed between the second electrode and the third electrode, and a control element disposed between the first electrode and the second electrode; and
the memory storage element being processed to a higher degree than the control element. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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43. A computer readable medium having computer executable instructions to be read by a processor, which when read by the processor causes the processor to control a series of processing actions including:
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depositing a first electrode on a substrate;
forming a control element on the substrate by partial-processing the first electrode;
creating a second electrode; and
forming a memory element on the substrate by processing the second electrode. - View Dependent Claims (44)
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Specification