MEMS device and method of forming MEMS device
First Claim
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1. A method of forming a MEMS device, the method comprising:
- providing a substructure including a base material and at least one conductive layer formed on a first side of the base material;
forming a dielectric layer over the at least one conductive layer of the substructure;
forming a protective layer over the dielectric layer;
defining an electrical contact area for the MEMS device on the protective layer; and
forming an opening within the electrical contact area through the protective layer and the dielectric layer to the at least one conductive layer of the substructure.
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Abstract
A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a first side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, forming a protective layer over the dielectric layer, defining an electrical contact area for the MEMS device on the protective layer, and forming an opening within the electrical contact area through the protective layer and the dielectric layer to the at least one conductive layer of the substructure.
221 Citations
56 Claims
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1. A method of forming a MEMS device, the method comprising:
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providing a substructure including a base material and at least one conductive layer formed on a first side of the base material;
forming a dielectric layer over the at least one conductive layer of the substructure;
forming a protective layer over the dielectric layer;
defining an electrical contact area for the MEMS device on the protective layer; and
forming an opening within the electrical contact area through the protective layer and the dielectric layer to the at least one conductive layer of the substructure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a micro-mirror device, the method comprising:
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providing a substructure including a base material and at least one conductive layer formed on a first side of the base material;
forming a layer of a dielectric material over the at least one conductive layer of the substructure;
forming a layer of a material resistant to a second etch process within the layer of the dielectric material;
defining an electrical contact area for the micro-mirror device on the material resistant to the second etch process with a material resistant to a first etch process;
forming a reflective element over the dielectric material;
forming an opening in the electrical contact area through the dielectric material and the material resistant to the second etch process with the first etch process, including forming the opening to the at least one conductive layer of the substructure and defining an outline of the opening with the material resistant to the first etch process; and
substantially removing the dielectric material between the reflective element and the material resistant to the second etch process with the second etch process. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A MEMS device, comprising:
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a substructure including a base material and at least one conductive layer formed on a first side of the base material;
a dielectric layer formed over the at least one conductive layer of the substructure;
a protective layer formed over the dielectric layer;
an actuating element extended over the protective layer; and
an electrical contact area including an opening formed through the protective layer and the dielectric layer to the at least one conductive layer of the substructure. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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45. A micro-mirror device, comprising:
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a substructure including a base material and at least one conductive layer formed on a first side of the base material;
a first dielectric layer formed over the at least one conductive layer of the substructure;
a second dielectric layer formed over the first dielectric layer;
a reflective element extended over the second dielectric layer; and
an electrical contact area including an opening formed through the second dielectric layer and the first dielectric layer to the at least one conductive layer of the substructure. - View Dependent Claims (46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
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Specification