Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby

• US 20040245637A1
• Filed: 06/05/2003
• Published: 12/09/2004
• Est. Priority Date: 06/05/2003
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Mitchell, Peter H., Koburger, Charles William III, Horak, David Vaclav, Nesbit, Larry Alan
• Granted Patent: US 6,890,828 B2
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05093 of a plurality of vias
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01032 Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01073 Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

A method for forming interlevel dielectric levels in a multilevel interconnect structure formed by a damascene process. The conductive features characteristic of the damascene process are formed in a removable mandrel material for each level of the interconnect structure. In at least one level, a portion of the mandrel material underlying the bond pad is clad on all sides with the metal forming the conductive features to define a support pillar. After all levels of the interconnect structure are formed, the mandrel material surrounding the conductive features is removed to leave air-filled voids that operate as an interlevel dielectric. The support pillar is impermeable to the etchant such that mandrel material and metal inside the support pillar is retained. The support pillar braces the bond pad against vertical mechanical forces applied by, for example, probing or wire bonding and thereby reduces the likelihood of related damage to the interconnect structure.

Claims

1. A method for manufacturing a multi-level interconnect structure with structural support for a bond pad, comprising:

applying a mandrel material to a substrate;

forming a damascene pattern in the mandrel material by removing portions of the mandrel material, the damascene pattern including a closed channel surrounding a core of the mandrel material;

filling the damascene pattern with a conductive material to create a plurality of features having the mandrel material disposed between adjacent features and a support pillar defined by conductive material filling the closed channel and surrounding the core of the mandrel material; and

removing the mandrel material between adjacent features to leave air-filled voids between adjacent features, the support pillar providing vertical support to an overlying bond pad that is electrically coupled with at least one of the features.

2. The method of claim 1 wherein forming the damascene pattern in the mandrel material further comprises partially removing the mandrel material to form vias, trenches opening onto the underlying vias, and the closed channel.

3. The method of claim 2 wherein filling the damascene pattern with the conductive material further comprises introducing the conductive material into vias, trenches, and the closed channel with a single deposition of conductive material.

4. The method of claim 2 wherein removing the mandrel material to form trenches and a portion of the closed channel is performed by a single lithographic and etch operation.

5. The method of claim 2 wherein removing the mandrel material to form vias and a portion of the closed channel is performed by a single lithographic and etch operation.

6. The method of claim 1 wherein the conductive material is copper and the mandrel material is selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium.

7. The method of claim 6 wherein removing the mandrel material from between adjacent features further comprises exposing the mandrel material to an isotropic etchant capable of removing the mandrel material selective to copper.

8. The method of claim 7 wherein the isotropic etchant is capable of removing the mandrel material selective to titanium, titanium nitride, tantalum, tantalum nitride, silicon oxide, silicon nitride, and aluminum.

9. The method of claim 1 wherein removing the mandrel material from between adjacent features further comprises exposing the mandrel material to an isotropic etchant.

10. The method of claim 9 wherein the mandrel material is amorphous silicon and the isotropic etchant contains potassium hydroxide.

11. The method of claim 9 wherein the mandrel material is amorphous germanium and the isotropic etchant contains potassium hydroxide.

12. The method of claim 9 further comprising:

forming at least one layer overlying the features, the mandrel material between adjacent features, and the support pillar, wherein the layer prevents vertical infiltration of the isotropic etchant into the core of the mandrel material within the support pillar.

13. The method of claim 9 further comprising forming a cap of the conductive material on the substrate underlying the support pillar, the cap closing the core of the support pillar to vertical infiltration of the isotropic etchant.

14. The method of claim 9 wherein forming the damascene pattern in the mandrel material further comprises etching the core of the support pillar so that the conductive material at least partially covers an upper surface of the core to define a cap closing the core of the support pillar to vertical infiltration of the isotropic etchant.

15. The method of claim 1 further comprising performing a polishing process to expose an upper surface of the mandrel material between adjacent features so that the conductive material only remains within the damascene pattern and the closed channel.

16. The method of claim 1 wherein removing the mandrel material from between adjacent features further comprises:

forming at least one layer overlying the features and the mandrel material between adjacent features;

defining at least one passageway through the layer leading to the mandrel material between adjacent features; and

introducing an isotropic etchant into the passageway for selectively etching the mandrel material relative to at least the conductive material for leaving the air void between adjacent features.

17. The method of claim 16 wherein the isotropic etchant is not admitted into the core of the support pillar.

18. The method of claim 17 wherein the layer prevents vertical infiltration of the isotropic etchant into the core of the mandrel material.

19. The method of claim 1 further comprising forming a bond pad overlying the support pillar and electrically coupled with at least one of the features.

20. The method of claim 1 wherein filling the damascene pattern with the conductive material further comprises creating at least one of the plurality of features inside the core of the mandrel material.

21. A multilevel interconnect structure comprising:

a plurality of damascene features filled by a conductive material, adjacent pairs of the plurality of damascene features separated by one of a plurality of air-filled voids;

a bond pad electrically coupled with at least one of said plurality of damascene features; and

a support pillar underlying said bond pad, said support pillar including a core of a mandrel material and a tubular outer layer formed of the conductive material, said outer layer surrounding said core of said mandrel material for protecting said core against an etching used to remove regions of said mandrel material from between adjacent pairs of said plurality of damascene features to provide said plurality of air-filled voids.

22. The multilevel interconnect structure of claim 21 wherein said conductive material is selected from the group consisting of copper and copper alloys.

23. The multilevel interconnect structure of claim 21 wherein said support pillar further includes a cap underlying said outer layer and said core, said cap joined in a fluid tight manner with said outer layer.

24. The multilevel interconnect structure of claim 23 wherein said cap contains a portion of said conductive material.

25. The multilevel interconnect structure of claim 24 wherein said cap further contains a portion of said mandrel material.

26. The multilevel interconnect structure of claim 25 further comprising an insulating layer overlying said cap, said insulating layer cooperating with said cap to protect said core against the etchant used to remove regions of said mandrel material from between adjacent pairs of the plurality of damascene features.

27. The multilevel interconnect structure of claim 23 wherein said cap contains one or more materials impervious to the etchant.

28. The multilevel interconnect structure of claim 21 wherein said support pillar further includes a cap overlying said outer layer and said core, said cap joined in a fluid tight manner with said outer layer.

29. The multilevel interconnect structure of claim 29 wherein said cap contains said conductive material.

30. The multilevel interconnect structure of claim 29 wherein said cap further contains said mandrel material.

31. The multilevel interconnect structure of claim 30 further comprising an insulating layer underlying said cap, said insulating layer cooperating with said cap to protect said core against the etching process used to remove regions of said mandrel material from between adjacent pairs of the plurality of damascene features.

32. The multilevel interconnect structure of claim 31 wherein said mandrel material is selected from the group consisting of amorphous silicon, amorphous germanium, and amorphous silicon-germanium.