Electrostatic actuator for microelectromechanical systems and methods of fabrication
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Accused Products
Abstract
A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.
102 Citations
119 Claims
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1-46. -46. (canceled)
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47. A method for fabricating a microelectromechanical apparatus comprising:
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forming first trenches on a first side of a substrate;
forming a layer of dielectric material on the first side of the substrate and filling the first trenches with the dielectric material to provide electrical isolation;
patterning a masking layer on a second side of the substrate that is opposite to the first side of the substrate;
forming vias on the first side of the substrate;
metallizing the first side of the substrate;
forming second trenches on the first side of the substrate to define structures;
deeply etching the second side of the substrate to form blades;
etching to release the structures. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54, 55)
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56. A method for fabricating a microelectromechanical apparatus, comprising:
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patterning a masking layer on a second side of a substrate having a second side that is opposite to a first side of the substrate;
deeply etching the second side of the substrate to form blades;
attaching a protective structure to the second side of the substrate;
forming first trenches on the first side of the substrate;
forming a layer of dielectric material on the first side of the substrate and filling the first trenches with the dielectric material to provide electrical isolation;
forming vias on the first side of the substrate;
metallizing the first side of the substrate;
forming second trenches on the first side of the substrate to define structures;
etching to release the structures. - View Dependent Claims (57, 58, 59, 60, 61, 62, 63, 64, 65)
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66. A method for fabricating a microelectromechanical apparatus comprising:
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forming a layer of dielectric material on a first side of a silicon-on-insulator (SOI) substrate;
patterning a masking layer on a second side of the SOI substrate that is opposite to the first side of the SOI substrate;
forming vias on the first side of the SOI substrate that extend through a buried oxide layer of the SOI substrate;
metallizing the first side of the SOI substrate;
forming trenches on the first side of the SOI substrate to define structures;
forming a passivation layer on the first side of the substrate on metallization of the first side of the SOI substrate and on sidewalls of the vias and trenches of the first side of the SOI substrate;
deeply etching the second side of the SOI substrate to form blades that reside beneath the respective vias;
etching to release the structures. - View Dependent Claims (67, 68, 69, 70, 71, 72, 73, 74)
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75. A method for fabricating a microelectromechanical apparatus, comprising:
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patterning a masking layer on a second side of the substrate that is opposite to a first side of the substrate;
attaching spacer substrate to the second side of the substrate;
forming first trenches on the first side of the substrate;
forming a layer of dielectric material on the first side of the substrate and filling the first trenches with the dielectric material to provide electrical isolation;
forming vias on the first side of the substrate;
metallizing the first side of the substrate;
forming second trenches on the first side of the substrate to define structures;
etching an opening through the spacer substrate to expose the masking layer on the second side of the substrate;
deeply etching the second side of the substrate to form blades;
etching to release the structures. - View Dependent Claims (76, 77, 78, 79, 80, 81, 82, 83)
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84-115. -115. (canceled)
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116. A method for fabricating a microelectromechanical apparatus, comprising the steps of:
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forming first trenches on a first side of a substrate;
forming a layer of dielectric material on the first side of the substrate and filling the first trenches with a dielectric material to provide electrical isolation;
patterning a masking layer on a second side of the substrate that is opposite to the first side of the substrate;
forming vias on the first side of the substrate;
metallizing the first side of the substrate;
depositing a second metal layer on the first side of the substrate in order to form a reflective surface;
forming second trenches on the first side of the substrate to define structures;
deeply etching the second side of the substrate to form blades;
attaching a base wafer to the second side of the substrate;
etching through the second trenches to release the structures; and
attaching a protective lid of transparent material to the first side of the substrate.
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117. A method for fabricating a microelectromechanical apparatus, comprising the steps of:
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patterning a masking layer on a second side of a substrate, wherein the second side of the substrate is opposite to a first side of the substrate;
deeply etching the second side of the substrate to form blades;
fusion bonding a protective base wafer with a recess to the second side of the substrate;
thinning the first side of the substrate;
forming first trenches on the first side of the substrate;
forming a layer of dielectric material on the first side of the substrate and filling the first trenches with the dielectric material to provide electrical isolation;
forming vias on the first side of the substrate;
metallizing the first side of the substrate;
depositing a second metal layer on the first side of the substrate in order to form a reflective surface;
forming second trenches on the first side of the substrate to define structures;
etching through the second trenches to release the structures; and
attaching a protective lid of transparent material to the first side of the substrate.
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118. A method for fabricating a microelectromechanical apparatus, comprising the steps of:
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forming a layer of dielectric material on a first side of a silicon-on-insulator (SOI) substrate;
patterning a masking layer on a second side of the SOI substrate that is opposite to the first side of the SOI substrate;
forming vias on the first side of the SOI substrate that extend through a buried oxide layer of the SOI substrate;
metallizing the first side of the SOI substate;
depositing a second metal layer on the first side of the SOI substrate in order to form a reflective surface;
forming trenches on the first side of the SOI substrate to define structures;
etching to the buried oxide layer of the SOI substrate to form blades that reside beneath the respective vias;
attaching a protective structure to the second side of the SOI substrate;
etching through the trenches to release the structures; and
attaching a transparent protective lid to the first side of the SOI substrate.
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119. A method for fabricating a microelectromechanical apparatus, comprising the steps of:
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patterning a masking layer on a second side of the substrate that is opposite to a first side of the substrate;
attaching a spacer substrate to the second side of the substrate;
forming first trenches on the first side of the substrate;
forming a layer of dielectric material on the first side of the substrate and filling the first trenches with the dielectric material to provide electrical isolation;
forming vias on the first side of the substrate;
metallizing the first side of the substrate;
depositing a second metal layer on the first side of the substrate in order to form a reflective surface;
forming second trenches on the first side of the substrate to define structures;
etching an opening through the spacer substrate to expose the masking layer on the second side of the substrate;
deeply etching the second side of the substrate to form blades;
etching through the second trenches to release the structures; and
attaching a protective lid to the first side of the substrate.
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Specification