Method of manufacturing a display device

• US 20040246432A1
• Filed: 12/17/2003
• Published: 12/09/2004
• Est. Priority Date: 12/27/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsuchiya, Kaoru, Saito, Keiko, Ishigaki, Ayumi
• Granted Patent: US 7,452,257 B2
• Time in Patent Office: Days
• US Class Current: 349/187
• CPC Class Codes: H05B 33/10 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• CPC Class Codes: H05B 33/26 characterised by the composition or arrangement of the conductive material used as an electrode
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/8051 Anodes
• CPC Class Codes: H10K 59/8052 Cathodes

Abstract

In order to suppress defect modes such as shrinkage or unevenness in light-emission in a light emitting element and to shorten a time needed for a pretreatment for forming a layer containing an organic compound (EL layer), according to the present invention, a light emitting element is formed by forming a first electrode that is electrically connected to a source region or a drain region of a thin film transistor, forming an insulating film to cover an edge portion of the first electrode, performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen, then, forming a layer containing an organic compound (EL layer) over the first electrode and the insulating film, and forming a second electrode over the layer containing an organic compound (EL layer).

Claims

1. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:

forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor;

forming an insulating film to cover an edge portion of the first electrode;

performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;

forming a layer containing an organic compound over the first electrode and the insulating film; and

forming a second electrode over the layer containing the organic compound.

2. The method for manufacturing the display device according to claim 1, wherein a flow rate ratio of argon gas and oxygen gas is from 1:

9 to 9;

1 in the atmosphere containing argon and oxygen.

3. The method for manufacturing the display device according to claim 1, wherein the step of performing the plasma treatment in the atmosphere containing argon and oxygen, the step of forming the layer containing the organic compound, and the step of forming the second electrode are performed sequentially and continuously.

4. The method for manufacturing the display device according to claim 1, wherein the first electrode is an anode and the second electrode is a cathode.

5. The method for manufacturing the display device according to claim 1, wherein the first electrode is made of ITO.

6. The method for manufacturing the display device according to claim 1, wherein the second electrode is formed by a resistance heating method or a sputtering method.

7. The method for manufacturing the display device according to claim 1, wherein the insulating film is made of polyimide, acryl, polyamide, polyimide-amide, resist or benzocyclobutene.

8. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:

forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor;

forming an insulating film to cover an edge portion of the first electrode;

cleaning the first electrode and the insulating film;

performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;

forming a layer containing an organic compound over the first electrode and the insulating film; and

forming a second electrode over the layer containing the organic compound.

9. The method for manufacturing the display device according to claim 8, wherein a flow rate ratio of argon gas and oxygen gas is from 1 to 9 to 9 to 1 in the atmosphere containing argon and oxygen.

10. The method for manufacturing the display device according to claim 8, wherein the step of performing the plasma treatment in the atmosphere containing argon and oxygen, the step of forming the layer containing the organic compound, and the step of forming the second electrode are performed sequentially and continuously.

11. The method for manufacturing the display device according to claim 8, wherein the first electrode is an anode and the second electrode is a cathode.

12. The method for manufacturing the display device according to claim 8, wherein the first electrode is made of ITO.

13. The method for manufacturing the display device according to claim 8, wherein the second electrode is formed by a resistance heating method or a sputtering method.

14. The method for manufacturing the display device according to claim 8, wherein the insulating film is made of polyimide, acryl, polyamide, polyimide-amide, resist or benzocyclobutene.

15. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:

forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor;

forming an insulating film to cover an edge portion of the first electrode;

,

performing vacuum heating to the first electrode and the insulating film;

performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;

forming a layer containing an organic compound over the first electrode and the insulating film; and

forming a second electrode over the layer containing the organic compound.

16. The method for manufacturing the display device according to claim 15, wherein a flow rate ratio of argon gas and oxygen gas is from 1:

9 to 9;

1 in the atmosphere containing argon and oxygen.

17. The method for manufacturing the display device according to claim 15, wherein the step of performing the plasma treatment in the atmosphere containing argon and oxygen, the step of forming the layer containing the organic compound, and the step of forming the second electrode are performed sequentially and continuously.

18. The method for manufacturing the display device according to claim 15, wherein a temperature of the vacuum heating is from 100°

C. to 250°

C.

19. The method for manufacturing the display device according to claim 15, wherein a degree of vacuum of the vacuum heating is 1×

10<sup>−

4</sup> Pa or less.

20. The method for manufacturing the display device according to claim 15, wherein the first electrode is an anode and the second electrode is a cathode.

21. ) The method for manufacturing the display device according to claim 15, wherein the first electrode is made of ITO.

22. The method for manufacturing the display device according to claim 15, wherein the second electrode is formed by a resistance heating method or a sputtering method.

23. The method for manufacturing the display device according to claim 15, wherein the insulating film is made of polyimide, acryl, polyamide, polyimide-amide, resist or benzocyclobutene.