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Selective metal encapsulation schemes

  • US 20040248409A1
  • Filed: 03/30/2004
  • Published: 12/09/2004
  • Est. Priority Date: 06/03/2003
  • Status: Active Grant
First Claim
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1. A method of processing a semiconductor substrate, comprising the steps of:

  • depositing a protective layer on a substrate surface comprising a conductive element;

    selectively removing a portion of the protective layer to expose the conductive element of the substrate surface;

    depositing a metallic passivating layer onto the exposed conductive element; and

    removing at least a portion of the protective layer from the substrate after deposition of the metallic passivating.

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