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Hall effect devices, memory devices, and hall effect device readout voltage increasing methods

  • US 20040251506A1
  • Filed: 06/10/2003
  • Published: 12/16/2004
  • Est. Priority Date: 06/10/2003
  • Status: Abandoned Application
First Claim
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1. A Hall Effect device comprising:

  • a conductive film layer capable of carrying an electrical current;

    a ferromagnetic layer having a configurable magnetization orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer;

    a high permeability magnetic layer disposed below the conductive film layer; and

    wherein the fringe magnetic fields are drawn towards the high permeability magnetic layer such that the magnetic fields pass through the conductive film layer to enable closure of the magnetic fields.

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