Hall effect devices, memory devices, and hall effect device readout voltage increasing methods
First Claim
Patent Images
1. A Hall Effect device comprising:
- a conductive film layer capable of carrying an electrical current;
a ferromagnetic layer having a configurable magnetization orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer;
a high permeability magnetic layer disposed below the conductive film layer; and
wherein the fringe magnetic fields are drawn towards the high permeability magnetic layer such that the magnetic fields pass through the conductive film layer to enable closure of the magnetic fields.
1 Assignment
0 Petitions
Accused Products
Abstract
Hall Effect devices, memory devices, and Hall Effect device readout voltage increasing method. A hall effect device includes a conductive film layer capable an electrical current, a ferromagnetic layer having a configurable orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer, a high permeability magnetic layer disposed below the conductive film layer. The fringe magnetic fields are drawn toward the high permeability magnetic layer such that the magnetic fields pass though the conductive film layer to enable closure of the magnetic fields.
-
Citations
28 Claims
-
1. A Hall Effect device comprising:
-
a conductive film layer capable of carrying an electrical current;
a ferromagnetic layer having a configurable magnetization orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer;
a high permeability magnetic layer disposed below the conductive film layer; and
wherein the fringe magnetic fields are drawn towards the high permeability magnetic layer such that the magnetic fields pass through the conductive film layer to enable closure of the magnetic fields. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A memory device comprising:
-
a first layer disposed on a second layer capable of carrying an electrical current, the first layer covering a portion of the second layer;
a third layer disposed below the second layer; and
wherein fringe magnetic fields generated at an edge of the first layer are drawn towards the third layer and pass through the second layer, thereby increasing a readout voltage of the memory device. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A hall effect device comprising:
-
a conductive film layer capable of carrying an electrical current;
a ferromagnetic layer having a configurable magnetization orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer;
one or more ferromagnetic components formed in close proximity to an edge of the ferromagnetic layer; and
wherein the conductive film layer is patterned using a mesa etch such that the one or more ferromagnetic components are located substantially beneath the level of the conductive film layer, and fringe magnetic fields generated from the edge of the ferromagnetic layer are drawn towards the one or more ferromagnetic components such that the magnetic fields pass through the conductive film layer to enable closure of the magnetic fields. - View Dependent Claims (17, 18, 19, 20, 21)
-
-
22. A hall effect device readout voltage increasing method comprising:
-
forming a conductive film layer capable of carrying an electrical current;
forming a ferromagnetic layer to cover the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer; and
forming a high permeability magnetic layer below the conductive film layer such that the fringe magnetic fields are drawn towards the high permeability magnetic layer and pass through the conductive film layer thereby increasing the readout voltage. - View Dependent Claims (23, 24, 25, 26, 27, 28)
-
Specification