CMOS type image sensor module having transparent polymeric encapsulation material

• US 20040251509A1
• Filed: 05/27/2004
• Published: 12/16/2004
• Est. Priority Date: 06/11/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Kyoung-Sei
• Granted Patent: US 7,105,904 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H04N 23/54 Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
• CPC Class Codes: H04N 23/55 Optical parts specially adapted for electronic image sensors; Mounting thereof
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

A CMOS type of image sensor module for use in a mobile camera or a PC camera includes an image sensoring semiconductor chip encapsulated in a transparent block of polymeric material on a substrate having a circuit to which the ship is connected. The image sensoring semiconductor chip is disposed on an upper surface of the substrate as spaced vertically from a digital signal processing second semiconductor chip mounted on a lower surface of the substrate. The transparent polymeric encapsulation material constitutes a sealing resin unit. The digital signal processing second semiconductor chip may also be encapsulated by the sealing resin unit. The sealing transfer unit can be formed by injection and/or transfer molding. The forming of the sealing resin unit by a single molding process keeps production costs low.

Claims

1. A CMOS type of image sensor module comprising:

a substrate, and a circuit pattern integral therewith;

a first semiconductor chip, having a CMOS sensor capable of picking up an optical image, mounted on an upper one of said sides of the substrate and wire-bonded to the circuit pattern;

a second semiconductor chip, capable of processing a digital signal, mounted on a lower one of said sides of the substrate and wire-bonded to the circuit pattern; and

a resin sealing unit comprising transparent polymeric material integrated with said substrate and encapsulating at least one of said first and second semiconductor chips.

2. The CMOS type of image sensor module of claim 1, wherein, of said first and second semiconductor chips, only said first semiconductor chip is encapsulated by a transparent polymeric material.

3. The CMOS type of image sensor module of claim 2, and further comprising an epoxy molding compound integrated with said substrate, said second semiconductor chip being embedded in said epoxy molding compound at the lower one of said sides of the substrate.

4. The CMOS type of image sensor module of claim 1, wherein the transparent polymeric material of said resin sealing unit encapsulates both said first and second semiconductor chips.

5. The CMOS type of image sensor module of claim 2, wherein said resin sealing unit comprises a screw thread.

6. The CMOS type of image sensor module of claim 2, and further comprising opaque material covering sides of said transparent polymeric material to prevent light from being transmitted through the sides of the transparent polymeric material.

7. The CMOS type of image sensor module of claim 6, wherein said opaque material is in the form of a tape.

8. The CMOS type of image sensor module of claim 5, and further comprising a lens kit mated to the screw thread of said resin sealing unit.

9. The CMOS type of image sensor module of claim 8, wherein said lens kit includes a housing, and an optical lens and an infrared filter disposed within said housing as spaced vertically from one another.

10. The CMOS type of image sensor module of claim 2, wherein the transparent polymeric material of said resin sealing unit comprises an optical lens.

11. The CMOS type of image sensor module of claim 10, and further comprising an infrared filtering material coating a surface of the optical lens.

12. The CMOS type of image sensor module of claim 3, and further comprising a passive device disposed on the lower one of said sides of the substrate.

13. The CMOS type of image sensor module of claim 12, wherein said passive device is embedded in said epoxy molding compound.

14. The CMOS type of image sensor module of claim 4, wherein said sealing resin unit encapsulates said first and second semiconductor chips and has a screw thread at an upper portion thereof.

15. The CMOS type of image sensor module of claim 14, and further comprising a lens kit mated to the screw thread of said resin sealing unit

16. The CMOS type of image sensor module of claim 15, wherein said lens kit includes a housing, and an optical lens and an infrared filter disposed within said housing as spaced vertically from one another.

17. The CMOS type of image sensor module of claim 4, wherein the transparent polymeric material of said resin sealing unit comprises an optical lens.

18. The CMOS type of image sensor module of claim 17, and further comprising an infrared filtering material coating a surface of the optical lens.

19. The CMOS of type image sensor module of claim 4, and further comprising opaque material covering sides of said transparent polymeric material to prevent light from being transmitted through the sides of the transparent polymeric material.

20. The CMOS type of image sensor module of claim 4, and further comprising a passive device disposed on the lower one of said sides of the substrate.

21. The CMOS type of image sensor module of claim 19, wherein said opaque material is in the form of a tape.

22. The CMOS type of image sensor module of claim 1, wherein said transparent polymeric material of the sealing resin unit comprises polymethymethacylate (PMMA), a polycarbonate (PC), a thermosetting transparent epoxy, or a transparent resin of acrylonitrile, butadiene, and styrene (ABS).

23. A method of manufacturing a CMOS type of image sensor module, the method comprising:

providing a substrate having a circuit pattern integral therewith;

mounting a digital signal processing semiconductor chip, capable of processing a digital signal, and a passive electronic device on a lower one of the sides of the substrate;

wire-bonding the digital signal processing semiconductor chip to the circuit pattern at the lower one of the sides of the substrate to electrically connect the digital signal processing semiconductor chip to the circuit pattern;

molding an epoxy molding compound to the lower one of the sides of the substrate over the digital signal processing semiconductor chip;

mounting an image sensoring semiconductor chip, having a CMOS image sensor capable of picking up an optical image, on an upper one of the sides of the substrate, and wire-bonding the image sensoring semiconductor chip to the circuit pattern to electrically connect the image sensoring semiconductor chip to the circuit pattern; and

molding a transparent polymeric material to the upper one of the sides of the substrate over the entirety of the image sensoring semiconductor chip to thereby form a sealing resin unit in which the image sensoring semiconductor chip is encapsulated by the polymeric material.

24. The manufacturing method of claim 23, wherein said molding of the polymeric material includes forming a screw thread on an upper portion of the resin sealing unit.

25. The manufacturing method of claim 24, and further comprising coupling a lens kit to the resin sealing unit by screwing the lens kit onto the unit using the screw thread thereof.

26. The manufacturing method of claim 23, wherein said molding of the polymeric material comprises injection molding, and the forming of an optical lens from the transparent polymeric material.

27. The manufacturing method of claim 26, and further comprising coating the lens with a material that filters infrared light.

28. The manufacturing method of claim 23, and further comprising securing opaque material along sides of the resin sealing unit to prevent light from being transmitted through the sides of the unit.

29. The manufacturing method of claim 23, wherein said molding of the transparent polymeric material comprises injection molding.

30. A method of manufacturing a CMOS type of image sensor module, comprising:

providing a substrate having a circuit pattern at both sides thereof;

mounting a digital signal processing semiconductor chip, capable of processing a digital signal, and a passive electronic device on a lower one of the sides of the substrate;

wire-bonding the digital signal processing semiconductor chip to the circuit pattern to electrically connect the digital signal processing semiconductor chip to the substrate;

mounting an image sensoring semiconductor chip, having a CMOS image sensor capable of picking up an optical image, on an upper one of the sides of the substrate, and wire-bonding the image sensoring semiconductor chip to the circuit pattern to electrically connect the image sensoring semiconductor chip to the circuit pattern; and

molding a transparent polymeric material to the upper and lower sides of the substrate over the entirety of the image sensoring semiconductor chip and over the digital signal processing semiconductor chip to thereby form a sealing resin unit in which the chips are encapsulated by the polymeric material.

31. The manufacturing method of claim 30, wherein said molding of the polymeric material includes forming a screw thread on an upper portion of the resin sealing unit.

32. The manufacturing method of claim 31, and further comprising coupling a lens kit to the resin sealing unit by screwing the lens kit onto the unit using the screw thread thereof.

33. The manufacturing method of claim 30, wherein said molding of the polymeric material comprises injection molding, and the forming of an optical lens from the transparent polymeric material at the upper one of the sides of the substrate.

34. The manufacturing method of claim 33, and further comprising coating the lens with a material that filters infrared light.

35. The manufacturing method of claim 30, and further comprising securing opaque material along sides of a portion of the resin sealing unit disposed above the upper one of the sides of the substrate, to prevent light from being transmitted through the sides of the unit adjacent the image sensoring semiconductor chip.

36. The manufacturing method of claim 30, wherein said molding a transparent polymeric material to the upper and lower sides of the substrate comprises injection molding.