Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes

• US 20040253378A1
• Filed: 06/12/2003
• Published: 12/16/2004
• Est. Priority Date: 06/12/2003
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Schmitt, Francimar C., MʼSaad, Hichem
• Application Number:
  US10/461,638
• Publication Number:
  US 20040253378A1
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

Claims

1. A method for depositing a low dielectric constant film, comprising:

delivering a gas mixture consisting essentially of;

a cyclic organosiloxane;

a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface; and

an inert gas; and

applying RF power to the gas mixture at conditions sufficient to deposit a film on the substrate surface, the film having a dielectric constant less than 3.2.

2. The method of claim 1, wherein the film has compressive stress.

3. The method of claim 1, wherein the cyclic organosiloxane comprises one or more silicon-carbon bonds.

4. The method of claim 3, wherein the cyclic organosiloxane is octamethylcyclotetrasiloxane (OMCTS).

5. The method of claim 1, wherein cyclic organosiloxane is selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, hexamethylcyclotrisiloxane, and decamethylcyclopentasiloxane.

6. The method of claim 1, wherein the linear hydrocarbon compound comprises one or two carbon-carbon double bonds.

7. The method of claim 1, wherein the linear hydrocarbon compound is ethylene.

8. The Method of claim 1, wherein the linear hydrocarbon compound is selected from the group consisting of ethylene, propylene, isobutylene, acetylene, allylene, ethylacetylene, 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, and piperylene.

9. The method of claim 1, wherein the gas mixture includes essentially no oxidizing gas.

10. The method of claim 1, wherein the inert gas is selected from the group consisting of helium, argon, and combinations thereof.

11. The method of claim 1, wherein the applying RF power comprises applying mixed frequency RF power to the gas mixture.

12. The method of claim 1, further comprising post-treating the low dielectric constant film with an electron beam.

13. A method for depositing a low dielectric constant film, comprising:

providing a gas mixture comprising;

a cyclic organosiloxane;

a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond; and

one or more oxidizing gases to a substrate surface; and

applying RF power to the gas mixture at conditions sufficient to deposit a film on the substrate surface, the film having a dielectric constant less than 3.2 and compressive stress.

14. The method of claim 13, wherein the one or more oxidizing gases is selected from the group consisting of oxygen, carbon dioxide, and combinations thereof.

15. The method of claim 13, wherein the one or more oxidizing gases comprises oxygen, and the conditions comprise an oxygen flow rate less than a flow rate of the linear hydrocarbon compound.

16. The method of claim 13, wherein the applying RF power comprises applying mixed frequency RF power to the gas mixture.

17. The method of claim 13, wherein the cyclic organosiloxane is octamethylcyclotetrasiloxane (OMCTS).

18. The method of claim 13, wherein the cyclic organosiloxane is selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, hexamethylcyclotrisiloxane, and decamethylcyclopentasiloxane.

19. The method of claim 13, wherein the linear hydrocarbon compound comprises one or two carbon-carbon double bonds.

20. The method of claim 13, wherein the linear hydrocarbon compound is ethylene.

21. The method of claim 13, wherein the linear hydrocarbon compound is selected from the group consisting of ethylene, propylene, isobutylene, acetylene, allylene, ethylacetylene, 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, and piperylene.

22. The method of claim 13, wherein the gas mixture further comprises a gas selected from the group consisting of helium, argon, and combinations thereof.

23. The method of claim 13, further comprising post-treating the low dielectric constant film with an electron beam.

24. A method for depositing a low dielectric constant film, comprising:

providing a gas mixture comprising;

octamethylcyclotetrasiloxane (OMCTS); and

ethylene; and

applying RF power to the gas mixture at conditions sufficient to deposit a film on the substrate surface, the film having a dielectric constant less than 3.0 and compressive stress; and

post-treating the film with an electron beam.

25. The method of claim 24, wherein the gas mixture further comprises one or more oxidizing gases.

26. The method of claim 25, wherein the one or more oxidizing gases is selected from the group consisting of oxygen, carbon dioxide, and combinations thereof.

27. The method of claim 25, wherein the one or more oxidizing gases comprises oxygen, and the conditions comprise an oxygen flow rate less than a flow rate of the ethylene.

28. The method of claim 24, wherein the applying RF power comprises applying mixed frequency RF power to the gas mixture.

29. The method of claim 24, wherein the gas mixture further comprises a gas selected from the group consisting of helium, argon, and combinations thereof.

30. The method of claim 24, wherein the gas mixture includes essentially no oxidizing gas.