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Method to fabricate a highly perforated silicon diaphragm with controlable thickness and low stress

  • US 20040253760A1
  • Filed: 06/13/2003
  • Published: 12/16/2004
  • Est. Priority Date: 06/13/2003
  • Status: Abandoned Application
First Claim
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1. A method of fabricating a perforated silicon diaphragm comprising:

  • providing a single crystal silicon substrate of a first conductivity type;

    blanket implanting first ions of a second conductivity type opposite said first conductivity type into said single crystal silicon substrate to form an etch stop layer;

    selectively implanting second ions of said first conductivity type into said single crystal silicon substrate to form a pattern of holes in a portion of said substrate;

    implanting third ions of said first conductivity type overlying said pattern of holes and forming a first ohmic contact region;

    implanting fourth ions of said second conductivity type not surrounding said pattern of holes to form a second ohmic contact region;

    thereafter depositing a nitride layer on a frontside and a backside of said silicon substrate;

    forming contacts through said nitride layer to said first and second ohmic contact regions;

    thereafter patterning said backside nitride layer; and

    from the backside, etching away said silicon substrate not covered by said nitride layer to said etch stop layer and simultaneously selectively etching away said pattern of holes to complete formation of said perforated diaphragm.

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