Wide band light sensing pixel array
First Claim
1. A wide band light sensing pixel array comprising:
- a set of pixel groups, each pixel group comprising a set of visible light pixels comprising a set of CMOS photodetectors and a corresponding set of monochromatic pixel light filters of different visible light bands, wherein the set of visible light pixels has a first nominal sensitivity and generates a set of visible light output signals, each of which has an output value during a visible exposure period, and a near infrared light pixel comprising a CMOS photodetector and a corresponding near infrared pixel light filter, wherein the near infrared light pixel has a second nominal sensitivity and generates a near infrared output signal having an output value during a near infrared exposure period; and
a control circuit coupled to the set of visible light output signals and to the near infrared output signal, that establishes a ratio of the infrared exposure period to the visible exposure period that is essentially equivalent to the ratio of the first nominal sensitivity to the second nominal sensitivity.
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Accused Products
Abstract
In a wide band light sensing pixel array (100) comprising pixel groups (105), a ratio of a visible exposure period to a near infrared exposure period is controlled by a control circuit (108) to be essentially equivalent to a ratio of a second nominal sensitivity to a first nominal sensitivity. The visible exposure period is an exposure period of a set of visible light pixels having the first nominal sensitivity. The near infrared exposure period is an exposure period of a near infrared light pixel having the second nominal sensitivity. A subset of the set of visible light pixels and the near infrared light pixel in each pixel group (105) and circuit components associated only with the subset can be turned off during a reduced color mode.
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Citations
17 Claims
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1. A wide band light sensing pixel array comprising:
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a set of pixel groups, each pixel group comprising a set of visible light pixels comprising a set of CMOS photodetectors and a corresponding set of monochromatic pixel light filters of different visible light bands, wherein the set of visible light pixels has a first nominal sensitivity and generates a set of visible light output signals, each of which has an output value during a visible exposure period, and a near infrared light pixel comprising a CMOS photodetector and a corresponding near infrared pixel light filter, wherein the near infrared light pixel has a second nominal sensitivity and generates a near infrared output signal having an output value during a near infrared exposure period; and
a control circuit coupled to the set of visible light output signals and to the near infrared output signal, that establishes a ratio of the infrared exposure period to the visible exposure period that is essentially equivalent to the ratio of the first nominal sensitivity to the second nominal sensitivity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method used in a wide band light sensing pixel array comprising:
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controlling a ratio of a near infrared exposure period to a visible exposure period to be essentially equivalent to a ratio of a first nominal sensitivity to a second nominal sensitivity, wherein the visible exposure period is an exposure period of a set of visible light pixels having the first nominal sensitivity during which a set of visible light output signals, each of which has an output value, is generated, and wherein the near infrared exposure period is an exposure period of a near infrared light pixel having the second nominal sensitivity during which a near infrared output signal having an output value is generated. - View Dependent Claims (14, 15, 16, 17)
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Specification