Wide band light sensing pixel array

• US 20040256561A1
• Filed: 06/17/2003
• Published: 12/23/2004
• Est. Priority Date: 06/17/2003
• Status: Abandoned Application

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Castro, Francisco, Li, Wanqing, Beuhler, Allyson
• Application Number:
  US10/463,032
• Publication Number:
  US 20040256561A1
• Time in Patent Office: Days
• US Class Current: 250/339.05
• CPC Class Codes: G01J 3/2803 using photoelectric array detector
• CPC Class Codes: G01J 3/32 Investigating bands of a spectrum in sequence by a single detector
• CPC Class Codes: G01J 3/513 having fixed filter-detector pairs
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 23/73 by influencing the exposure time
• CPC Class Codes: H04N 23/84 for processing colour signals
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements

Abstract

In a wide band light sensing pixel array (100) comprising pixel groups (105), a ratio of a visible exposure period to a near infrared exposure period is controlled by a control circuit (108) to be essentially equivalent to a ratio of a second nominal sensitivity to a first nominal sensitivity. The visible exposure period is an exposure period of a set of visible light pixels having the first nominal sensitivity. The near infrared exposure period is an exposure period of a near infrared light pixel having the second nominal sensitivity. A subset of the set of visible light pixels and the near infrared light pixel in each pixel group (105) and circuit components associated only with the subset can be turned off during a reduced color mode.

Claims

1. A wide band light sensing pixel array comprising:

a set of pixel groups, each pixel group comprising

a set of visible light pixels comprising a set of CMOS photodetectors and a corresponding set of monochromatic pixel light filters of different visible light bands, wherein the set of visible light pixels has a first nominal sensitivity and generates a set of visible light output signals, each of which has an output value during a visible exposure period, and

a near infrared light pixel comprising a CMOS photodetector and a corresponding near infrared pixel light filter, wherein the near infrared light pixel has a second nominal sensitivity and generates a near infrared output signal having an output value during a near infrared exposure period; and

a control circuit coupled to the set of visible light output signals and to the near infrared output signal, that establishes a ratio of the infrared exposure period to the visible exposure period that is essentially equivalent to the ratio of the first nominal sensitivity to the second nominal sensitivity.

2. The wide band light sensing pixel array according to claim 1, wherein the set of CMOS photodetectors and the CMOS photodetector are arranged in an essentially co-planar configuration.

3. The wide band light sensing pixel array according to claim 1, wherein the ratio of the first nominal sensitivity to the second nominal sensitivity is at least three.

4. The wide band light sensing pixel array according to claim 1, wherein each output value of the visible light output signals increases in response to an intensity of light of one of the different visible light bands incident upon each of the monochromatic pixel light filters during the visible exposure period and the output value of the infrared light output signal increases in response to an intensity of near infrared light incident upon the near infrared pixel light filter during the near infrared exposure period.

5. The wide band light sensing pixel array according to claim 1, wherein the set of pixel groups and the control circuit are on a single CMOS integrated circuit.

6. The wide band light sensing pixel array according to claim 1, wherein the set of visible light pixels comprise three CMOS photodetectors and a corresponding set of red, green, and blue light filters.

7. The wide band light sensing pixel array according to claim 1, wherein the set of visible light pixels comprise three CMOS photodetectors and a corresponding set of cyan, yellow, and magenta light filters.

8. The wide band light sensing pixel array according to claim 1, wherein a subset of the set of visible light pixels and the near infrared light pixel and circuit components in each pixel group associated only with the subset are turned off during a reduced color mode.

9. The wide band light sensing pixel array according to claim 1, wherein a pixel measurement circuit coupled to the set of visible light output signals and the near infrared output signal generates a pixel output signal that comprises a set of values based on a subset of light output signals selected from the set of visible light output signals and the near infrared light output signal that includes at least one light output signal.

10. The wide band light sensing pixel array according to claim 9, wherein a subset of the set of visible light pixels and the near infrared light pixel and directly associated circuit components in each pixel group that are not members of the subset of selected light output signals are turned off.

11. The wide band light sensing pixel array according to claim 1, wherein each CMOS photodetector of the set of visible light pixels and the near infrared light pixels comprises an integrator.

12. The wide band light sensing pixel array according to claim 1, wherein each integrator comprises a junction capacitance of the CMOS photodetector.

13. A method used in a wide band light sensing pixel array comprising:

controlling a ratio of a near infrared exposure period to a visible exposure period to be essentially equivalent to a ratio of a first nominal sensitivity to a second nominal sensitivity,

wherein the visible exposure period is an exposure period of a set of visible light pixels having the first nominal sensitivity during which a set of visible light output signals, each of which has an output value, is generated, and

wherein the near infrared exposure period is an exposure period of a near infrared light pixel having the second nominal sensitivity during which a near infrared output signal having an output value is generated.

14. The method according to claim 13, wherein the ratio of the first nominal sensitivity to the second nominal sensitivity is at least three.

15. The method according to claim 13, further comprising:

turning off a subset of the set of visible light pixels and the near infrared light pixel and circuit components in each pixel group associated only with the subset during a reduced color mode.

16. The method according to claim 13, further comprising:

generating a pixel output signal that comprises a set of values based on a subset of light output signals selected from the set of visible light output signals and the near infrared light output signal that includes at least one light output signal.

17. The method according to claim 16, further comprising:

turning off a subset of the set of visible light pixels and the near infrared light pixel and directly associated circuit components in each pixel group that are not members of the subset of selected light output signals.