Transverse device array phase shifter circuit techniques and antennas

• US 20040257288A1
• Filed: 06/18/2003
• Published: 12/23/2004
• Est. Priority Date: 06/18/2003
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Lewis, Robert T., Baker, David W., Henderson, William H., Ulmer, David R., Chu, Ruey-Shi, Pierce, Brian M., Broas, Romulo J., Robertson, Ralston S. Jr.
• Granted Patent: US 6,999,040 B2
• Time in Patent Office: Days
• US Class Current: 343/772
• CPC Class Codes: H01P 1/182 Waveguide phase-shifters H01P1/181, H01P1/185, H01P1/19 take precedence
• CPC Class Codes: H01P 1/185 using a diode or a gas filled discharge tube
• CPC Class Codes: H01Q 13/20 Non-resonant leaky-waveguide or transmission-line antennas; Equivalent structures causing radiation along the transmission path of a guided wave
• CPC Class Codes: H01Q 13/28 comprising elements constituting electric discontinuities and spaced in direction of wave propagation, e.g. dielectric elements or conductive elements forming artificial dielectric
• CPC Class Codes: H01Q 3/34 by electrical means active lenses or reflecting arrays H01Q3/46

Abstract

A transverse device array phase shifter includes an overmoded waveguide structure having a top conductive broad wall surface, a bottom conductive broad wall surface and opposed first and second conductive side wall surfaces. At least one transverse device array circuit is positioned in the waveguide circuit. Each circuit comprises a generally planar dielectric substrate having a microwave circuit defined thereon, and a plurality of spaced discrete phase shifter elements. The substrate is disposed within the waveguide structure generally transverse to the side wall surfaces. A bias circuit applies a voltage to reverse bias the phase shifter elements. The transverse device array phase shifter circuit causes a change in phase of microwave or millimeter-wave energy propagating through the waveguide structure. An electronically scanned antenna array employing continuous transverse stubs as radiating elements, with an upper conductive plate structure comprising a set of continuous transverse stubs, and a lower conductive plate structure disposed in a spaced relationship relative to the upper plate structure. At least one transverse device array phase shifter circuit is disposed between selected adjacent pairs of stubs. An electronically tunable antenna array employing continuous transverse stubs as radiating elements and transverse diode array phase shifters, which includes a short circuit termination disposed between the upper conductive plate and the lower conductive plate. At least one transverse device array phase shifter circuit is positioned between the short circuit termination and an adjacent stub to provide tuning.

Claims

1. A transverse device array phase shifter, comprising:

a potentially overmoded waveguide structure having a top conductive broad wall surface, a bottom conductive broad wall surface, and opposed first and second conductive side wall surfaces;

at least one transverse device array phase shifter circuit, each circuit comprising a generally planar dielectric substrate having a microwave circuit defined thereon, and a plurality of spaced discrete voltage variable capacitance elements, the substrate disposed within the waveguide structure generally transverse to the side wall surfaces; and

a bias circuit for applying a bias voltage to bias the voltage variable capacitance elements;

said at least one phase shifter circuit causing a change in phase of microwave or millimeter-wave energy propagating through the waveguide structure.

2. The phase shifter of claim 1, wherein the voltage variable capacitance elements each comprise a semiconductor junction.

3. The phase shifter of claim 2, wherein the voltage variable capacitance elements each comprise a varactor diode.

4. The phase shifter of claim 2, wherein the bias circuit applies a reverse bias voltage to reverse bias the semiconductor junctions.

5. The phase shifter of claim 4, wherein the bias circuit is adapted to provide a variable reverse bias voltage to change the capacitance of the semiconductor junctions.

6. The phase shifter of claim 1, wherein said at least one transverse device array circuit comprises a plurality of spaced transverse device array circuits disposed in the waveguide structure.

7. The phase shifter of claim 6, wherein each said transverse device array circuit comprises a substrate, and wherein the substrates of the plurality of spaced transverse device array circuits are disposed in a parallel configuration.

8. The phase shifter of claim 1 further comprising a dielectric fill material disposed in said waveguide structure.

9. The phase shifter of claim 1, wherein the substrate of each of said at least one transverse device array circuit is positioned generally transverse to said top wall surface and said bottom wall surface.

10. An electronically scanned antenna employing continuous transverse stubs as radiating elements, the antenna comprising:

an upper conductive plate structure comprising a set of continuous transverse stubs;

a lower conductive plate structure disposed in a spaced relationship relative to the upper plate structure;

at least one transverse device array circuit disposed between a selected adjacent pair of said stubs, each at least one circuit comprising a generally planar dielectric substrate having a microwave circuit defined thereon, and a plurality of spaced discrete voltage variable capacitance elements, the substrate disposed between the upper conductive plate structure and the lower conductive plate structure; and

a bias circuit for applying a bias voltage to bias the voltage variable capacitance elements.

11. The antenna of claim 10, wherein the voltage variable capacitance elements each comprise a semiconductor junction.

12. The antenna of claim 11, wherein the voltage variable capacitance elements each comprise a varactor diode.

13. The antenna of claim 11, wherein the bias circuit applies a reverse bias voltage to reverse bias the semiconductor junctions.

14. The antenna of claim 13, wherein the bias circuit is adapted to provide a variable reverse bias voltage to change the capacitance of the semiconductor junctions.

15. The antenna of claim 10, wherein at least one transverse device array circuit comprises a plurality of spaced transverse device array circuits disposed in the waveguide structure.

17. The antenna of claim 10 further comprising a dielectric fill material disposed in said waveguide structure.

18. The antenna of claim 10 wherein the substrate of each of said at least one transverse device array circuit is positioned generally transverse to said top wall surface and said bottom wall surface.

16. The antenna shifter of claim 16, wherein each said phase transverse device array circuit comprises a substrate, and wherein the substrates of the plurality of spaced transverse device array circuits are disposed in a parallel configuration.

19. An electronically tunable antenna array employing continuous transverse stubs as radiating elements, comprising:

an upper conductive plate structure comprising a set of continuous transverse stubs;

a lower conductive plate structure disposed in a spaced relationship relative to the upper plate structure;

a short circuit termination disposed between the upper conductive plate and the lower conductive plate;

at least one transverse device array circuit disposed between said short circuit termination and an adjacent continuous transverse stub, each at least one circuit comprising a generally planar dielectric substrate having a microwave circuit defined thereon, and a plurality of spaced discrete voltage variable capacitance elements and

a bias circuit for applying a bias voltage to bias the voltage variable capacitance elements to provide a phase shift to electromagnetic energy propagating in the array.

20. The array of claim 19, wherein the bias circuit applies a variable bias voltage in dependence on an array frequency of operation to provide a phase shift to maintain a generally constant effective electrical distance between said short circuit termination and said adjacent continuous transverse stub as said frequency of operation changes.

21. The array of claim 19, wherein the voltage variable capacitance elements each comprise a semiconductor junction.

22. The array of claim 19, wherein the voltage variable capacitance elements each comprise a varactor diode.

23. The array of claim 21, wherein the bias circuit applies a reverse bias voltage to reverse bias the semiconductor junctions.

24. The array of claim 21, wherein the bias circuit is adapted to provide a variable reverse bias voltage to change the capacitance of the semiconductor junctions.

25. An electronically tunable antenna array employing continuous transverse stubs as radiating elements, comprising:

an upper conductive plate structure comprising a set of continuous transverse stubs;

a lower conductive plate structure disposed in a spaced relationship relative to the upper plate structure;

a short circuit termination disposed between the upper conductive plate and the lower conductive plate;

at least one transverse diode array phase shifter circuit, each circuit comprising a generally planar dielectric substrate having a microwave circuit defined thereon, and a plurality of spaced discrete semiconductor diode elements, the substrate disposed within the waveguide structure generally transverse to the side wall surfaces, said circuit disposed between said short circuit termination and an adjacent continuous transverse stub; and

a bias circuit for applying a reverse bias voltage to reverse bias the diodes.