Integrated thin film batteries on silicon integrated circuits

• US 20040258984A1
• Filed: 04/13/2004
• Published: 12/23/2004
• Est. Priority Date: 04/14/2003
• Status: Abandoned Application

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Ariel, Nava, Ceder, Gerbrand, Sadoway, Donald R., Fitzgerald, Eugene A.
• Application Number:
  US10/823,083
• Publication Number:
  US 20040258984A1
• Time in Patent Office: Days
• US Class Current: 429/152
• CPC Class Codes: H01M 10/0436 Small-sized flat cells or batteries for portable equipment
• CPC Class Codes: H01M 10/052 Li-accumulators
• CPC Class Codes: H01M 10/0562 Solid materials
• CPC Class Codes: H01M 10/0585 of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
• CPC Class Codes: H01M 10/425 Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing printed circuits H05K1/00
• CPC Class Codes: H01M 2004/021 Physical characteristics, e.g. porosity, surface area
• CPC Class Codes: H01M 2300/0071 Oxides
• CPC Class Codes: H01M 4/0428 Chemical vapour deposition
• CPC Class Codes: H01M 4/386 Silicon or alloys based on silicon
• CPC Class Codes: H01M 6/185 with oxides, hydroxides or oxysalts as solid electrolytes
• CPC Class Codes: H01M 6/40 Printed batteries , e.g. thin film batteries
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 29/49108 Electric battery cell making
• CPC Class Codes: Y10T 29/49115 including coating or impregnating

Abstract

A solid-state battery including at least one thin film layer, and method for making same.

Claims

1. A solid-state battery, comprising:

a plurality of stacked thin film layers,

wherein the solid-state battery is at least partially integrated within the stacked layers and has a thickness less than about 1 μ

m.

2. The solid-state battery of claim 1 wherein the stacked thin film layers comprise a cathode layer, an electrolyte layer, and an anode layer.

3. The solid-state battery of claim 2 wherein (i) the electrolyte layer is disposed proximate the cathode layer, the electrolyte layer having a first surface contacting the cathode layer;

and (ii) the anode layer is disposed proximate the electrolyte layer, the anode layer contacting a second surface of the electrolyte layer.

4. The solid-state battery of claim 2 wherein the electrolyte comprises silicon dioxide.

5. The solid-state battery of claim 4 wherein the electrolyte is substantially free of lithium.

6. The solid-state battery of claim 4 wherein the electrolyte layer has a thickness less than about 100 nm.

7. The solid-state battery of claim 2 wherein at least one of the anode and cathode comprises silicon.

8. The solid-state battery of claim 2 wherein at least one of the anode and the cathode comprises lithium.

9. The solid state battery of claim 8 wherein at least one of the anode and the cathode comprises at least one of a lithium-metal alloy, a III-V compound, a II-VI compound, a nitride, lithium intercalated into graphite, and an oxide.

10. The solid-state battery of claim 9 wherein at least one of the anode and the cathode comprises at least one of Li₂₂Sn₅, LiCoO₂, titanium nitride, nickel silicide, cobalt silicide, titanium oxide, and a transition metal oxide.

11. The solid-state battery of claim 2 wherein the cathode layer has a thickness less than about 500 nm.

12. The solid-state battery of claim 2 wherein the anode layer has a thickness less than about 500 nm.

13. The solid-state battery of claim 1 wherein the stacked layers are formed on a substrate, and at least a portion of the substrate comprises at least a portion of the solid-state battery.

14. The solid-state battery of claim 13 wherein the substrate comprises an anode.

15. The solid-state battery of claim 13 wherein the substrate comprises a cathode.

16. The solid-state battery of claim 1 wherein the battery is integrated within and operatively connected to an integrated circuit defined on the substrate.

17. The solid-state battery of claim 1, further comprising:

a contact layer disposed over the battery.

18. A method for forming a solid-state battery, comprising the steps of:

forming a plurality of thin film layers over a substrate; and

patterning the plurality of thin film layers to define the solid-state battery,

wherein the solid-state battery has a thickness less than approximately 1 μ

m.

19. The method of claim 18 wherein the plurality of thin film layers includes a cathode layer, an electrolyte layer, and an anode layer.

20. The method of claim 19 wherein the electrolyte layer comprises silicon dioxide.

21. The method of claim 20 wherein forming the electrolyte layer comprises at least one of dry oxidation and wet oxidation.

22. The method of claim 20 wherein the electrolyte layer has a thickness less than approximately 500 nm.

23. The method of claim 18 wherein forming the layers comprises sputtering.

24. The method of claim 18 wherein forming the layers comprises chemical vapor deposition.

25. The method of claim 18 wherein patterning the layers comprises photolithography.

26. The method of claim 18 wherein patterning the layers comprises etching.

27. The method of claim 18 wherein the solid-state battery is integrated within and operatively connected to an integrated circuit disposed on the substrate

28. A solid-state battery, comprising:

a plurality of stacked thin film layers,

wherein the solid-state battery is at least partially integrated within the stacked thin film layers, the stacked thin film layers comprise an electrolyte layer and the electrolyte layer has a thickness of less than about 100 nm.

29. The solid-state battery of claim 28 wherein the stacked thin film layers further comprise a cathode layer and an anode layer.

30. The solid-state battery of claim 29 wherein (i) the electrolyte layer is disposed proximate the cathode layer, the electrolyte layer having a first surface contacting the cathode layer;

and (ii) the anode layer is disposed proximate the electrolyte layer, the anode layer contacting a second surface of the electrolyte layer.

31. The solid-state battery of claim 29 wherein the electrolyte comprises silicon dioxide.

32. The solid-state battery of claim 29 wherein the electrolyte is substantially free of lithium.

33. The solid-state battery of claim 31 wherein the electrolyte layer has a thickness less than about 10 nm.

34. The solid-state battery of claim 29 wherein at least one of the anode and cathode comprises silicon.

35. The solid-state battery of claim 29 wherein at least one of the anode and the cathode comprises lithium.

36. The solid state battery of claim 35 wherein at least one of the anode and the cathode comprises at least one of a lithium-metal alloy, a III-V compound, a II-VI compound, a nitride, lithium intercalated into graphite, and an oxide.

37. The solid-state battery of claim 36 wherein at least one of the anode and the cathode comprises at least one of Li₂₂Sn₅, LiCoO₂, titanium nitride, nickel silicide, cobalt silicide, titanium oxide, and a transition metal oxide.

38. The solid-state battery of claim 29 wherein the cathode layer has a thickness less than about 500 nm.

39. The solid-state battery of claim 29 wherein the anode layer has a thickness less than about 500 nm.

40. The solid-state battery of claim 28 wherein the stacked layers are formed on a substrate, and at least a portion of the substrate comprises at least a portion of the solid-state battery.

41. The solid-state battery of claim 40 wherein the substrate comprises an anode.

42. The solid-state battery of claim 40 wherein the substrate comprises a cathode.

43. The solid-state battery of claim 28 wherein the battery is integrated within and operatively connected to an integrated circuit defined on the substrate.

44. The solid-state battery of claim 28 further comprising:

a contact layer.

45. A method for forming a solid state battery, comprising the steps of:

forming a plurality of thin film layers over a substrate, and

chemical mechanical polishing at least one of the thin film layers.

46. A method for forming a solid-state battery, comprising the steps of:

forming a plurality of thin film layers over a substrate; and

patterning the plurality of thin film layers to define the solid-state battery, the solid-state battery including an electrolyte layer,

wherein the electrolyte layer has a thickness of less than about 100 nm.

47. The method of claim 46 wherein the plurality of thin film layers includes a cathode layer and an anode layer.

48. The method of claim 46 wherein the electrolyte layer comprises silicon dioxide.

49. The method of claim 48 wherein forming the electrolyte layer comprises at least one of dry oxidation and wet oxidation.

50. The method of claim 48 wherein the electrolyte layer has a thickness less than approximately 10 nm.

51. The method of claim 46 wherein forming the layers comprises sputtering.

52. The method of claim 46 wherein forming the layers comprises chemical vapor deposition.

53. The method of claim 46 wherein patterning the layers comprises photolithography.

54. The method of claim 46 wherein patterning the layers comprises etching.

55. The method of claim 46 wherein the solid-state battery is integrated within and operatively connected to an integrated circuit disposed on the substrate

56. The method of claim 46 wherein at least one of the thin film layer comprises polysilicon.

57. A solid-state battery, comprising:

a thin solid electrolyte layer,

wherein the electrolyte layer comprises an initial state and an operative state, the electrolyte layer in the initial state is substantially free of ions, and ions conduct through the electrolyte layer in the operative state during operation of the battery.