Solid-state imaging device
First Claim
1. A solid-state imaging device in which a substrate provided correspondingly to a pixel is carrying thereon a light receiving section that is structured by a stack of lamination layers each composed of a photoconductive layer and a transparent electrode layer thereabove, wherein the transparent electrode layer placed between the photoconductive layers has a translucent reflective layer with which light in a predetermined wavelength region is reflected but light on a long-wavelength side is passed through.
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Accused Products
Abstract
A solid-state imaging device including a substrate corresponding to a pixel. The substrate carries thereon a light receiving section, which is a stack of, in this order, a photoconductive layer for absorbing light in a wavelength region for red, a photoconductive layer for absorbing light in a wavelength region for green, and a photoconductive layer for absorbing light in a wavelength region for blue. A transparent electrode layer is provided on each of the photoconductive layers. The transparent electrode layer placed above the photoconductive layer and the transparent electrode layer placed below the photoconductive layer are sandwiching a translucent reflective layer for reflecting the light in the green wavelength region. Similarly, a translucent reflective layer is sandwiched between the transparent electrode layer placed above the photoconductive layer and the transparent electrode layer placed below the photoconductive layer for reflecting the light in the blue wavelength region. With such a structure, successfully provided is a single-plate color solid-state imaging device of a photoconductive-layer-stacked type achieving the higher color resolution and the better sensitivity.
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Citations
8 Claims
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1. A solid-state imaging device in which a substrate provided correspondingly to a pixel is carrying thereon a light receiving section that is structured by a stack of lamination layers each composed of a photoconductive layer and a transparent electrode layer thereabove, wherein
the transparent electrode layer placed between the photoconductive layers has a translucent reflective layer with which light in a predetermined wavelength region is reflected but light on a long-wavelength side is passed through.
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7. A solid-state imaging device, comprising:
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a first optical-electrical conversion layer;
a second optical-electrical conversion layer formed above the first optical-electrical conversion layer; and
a third optical-electrical conversion layer formed above the second optical-electrical conversion layer, wherein a first translucent layer is formed between the first optical-electrical conversion layer and the second optical-electrical conversion layer, and a second translucent layer is formed between the second optical-electrical conversion layer and the third optical-electrical conversion layer. - View Dependent Claims (8)
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Specification