Method and composition for the chemical-vibrational-mechanical planarization of copper
First Claim
1. A method for the removal of an excess copper-containing material from a substrate comprising a copper layer, the process comprising:
- providing the substrate comprising the copper layer and the excess copper-containing material disposed thereupon;
introducing the substrate into a vessel containing a chemical mechanical polishing mixture comprising a solution and a plurality of particles wherein the solution comprises an etchant, a modifier, and a surfactant and wherein an average particle diameter of the particles ranges from 100 to 3000 μ
m; and
agitating the vessel with the substrate contained therein to remove the excess copper-containing material from the substrate.
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Abstract
A mixture and method comprising same is described for chemical vibrational mechanical polishing (CVMP) of excess material from the underlying substrate surface. In one embodiment of the present invention, the method comprises: providing the substrate comprising the copper layer and the excess copper-containing material disposed thereupon; introducing the substrate into a vessel containing a chemical mechanical polishing mixture comprising a solution and a plurality of particles wherein the solution comprises an etchant, a modifier, and a surfactant and wherein an average particle diameter of the particles ranges from 100 to 3000 μm; and agitating the vessel with the substrate contained therein to remove the excess copper-containing material from the substrate.
39 Citations
22 Claims
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1. A method for the removal of an excess copper-containing material from a substrate comprising a copper layer, the process comprising:
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providing the substrate comprising the copper layer and the excess copper-containing material disposed thereupon;
introducing the substrate into a vessel containing a chemical mechanical polishing mixture comprising a solution and a plurality of particles wherein the solution comprises an etchant, a modifier, and a surfactant and wherein an average particle diameter of the particles ranges from 100 to 3000 μ
m; and
agitating the vessel with the substrate contained therein to remove the excess copper-containing material from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for the removal of an excess material from the surface of a substrate, the method comprising:
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introducing the substrate into a vessel having a chemical mechanical polishing mixture comprising a chemical solution and a plurality of particles having an average particle diameter ranging from 100 to 3000 μ
m; and
agitating the vessel with the substrate and the chemical mechanical polishing mixture contained therein to remove the excess material from the substrate.
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10. A method for the removal of an excess copper-containing material from a substrate comprising a copper layer, the process comprising:
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providing a chemical mechanical polishing mixture comprising a solution comprising an etchant, a modifier, and a surfactant and a plurality of non-abrasive particles wherein the average particle diameter ranges from 100 to 3000 μ
m and wherein a solution to void volume ratio is about 1 or less; and
contacting the substrate with the mixture to remove the excess copper-containing material from the substrate. - View Dependent Claims (11, 12)
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13. A chemical mechanical polishing mixture, the mixture comprising:
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a solution comprising an etchant, a modifier, and a surfactant; and
a plurality of particles having an average particle diameter ranging from 100 to about 3000 μ
m. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A chemical mechanical polishing mixture, the mixture comprising:
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a solution comprising from about 0.1% to 20% by weight of an etchant, 0.1% to 15% by weight of a modifier, and 0.001% to 10% by weight of a surfactant, and 50 to 99% of a solvent; and
a plurality of particles with an average particle diameter ranging from 100 to 3000 μ
m,wherein a solution to void volume ratio is about one or less. - View Dependent Claims (20, 21, 22)
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Specification