Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
First Claim
1. A method for etching a photolithographic substrate comprising the steps of:
- placing the photolithographic substrate on a support member in a vacuum chamber;
introducing at least one process gas into the vacuum chamber;
generating a plasma;
supplying an RF bias at or below the ion transit frequency to the support member in the vacuum chamber; and
etching the photolithographic substrate.
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Accused Products
Abstract
The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.
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Citations
41 Claims
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1. A method for etching a photolithographic substrate comprising the steps of:
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placing the photolithographic substrate on a support member in a vacuum chamber;
introducing at least one process gas into the vacuum chamber;
generating a plasma;
supplying an RF bias at or below the ion transit frequency to the support member in the vacuum chamber; and
etching the photolithographic substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for etching at least one material on a photolithographic substrate comprising the steps of:
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placing the photolithographic substrate on a support member in a vacuum chamber;
introducing at least one process gas into the vacuum chamber;
generating a plasma;
supplying an RF bias at or below the ion transit frequency to the support member in the vacuum chamber; and
etching at least one material from the photolithographic substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. An apparatus for processing a photolithographic substrate comprising:
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a vacuum chamber;
at least one gas supply communicating with said vacuum chamber for providing at least one process gas to said vacuum chamber;
a plasma generating source for generating a plasma in said vacuum chamber; and
an RF power source operating at an RF bias frequency at or below the ion transit frequency, said RF power source coupled to the photolithographic substrate support. - View Dependent Claims (36)
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37. A method for etching a photolithographic substrate comprising the steps of:
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placing the photolithographic substrate on a support member in a vacuum chamber;
introducing at least one process gas into the vacuum chamber;
generating a plasma;
supplying an RF bias to the support member in the vacuum chamber;
controlling the level of the RF bias; and
etching the photolithographic substrate. - View Dependent Claims (38, 39, 40, 41)
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Specification