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Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias

  • US 20040259367A1
  • Filed: 05/03/2004
  • Published: 12/23/2004
  • Est. Priority Date: 05/05/2003
  • Status: Active Grant
First Claim
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1. A method for etching a photolithographic substrate comprising the steps of:

  • placing the photolithographic substrate on a support member in a vacuum chamber;

    introducing at least one process gas into the vacuum chamber;

    generating a plasma;

    supplying an RF bias at or below the ion transit frequency to the support member in the vacuum chamber; and

    etching the photolithographic substrate.

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