Semiconductor gate structure and method for fabricating a semiconductor gate structure
First Claim
1. A method for fabricating a semiconductor gate structure comprising:
- depositing at least one sacrificial layer on a semiconductor substrate;
patterning the at least one sacrificial layer to form at least one cutout in the at least one sacrificial layer for uncovering the semiconductor substrate;
forming a sidewall spacer over sidewalls of the at least one sacrificial layer in the at least one cutout;
forming a gate dielectric on the semiconductor substrate in the cutout;
providing a gate electrode in the at least one cutout in the at least one sacrificial layer; and
removing the at least one sacrificial layer for uncovering the gate electrode surrounded by the sidewall spacer.
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Abstract
A method for fabricating a semiconductor gate structure including depositing at least one sacrificial layer on a semiconductor substrate; patterning the at least one sacrificial layer to form at least one cutout in the at least one sacrificial layer for uncovering the semiconductor substrate; forming a sidewall spacer over the sidewalls of the at least one sacrificial layer in the at least one cutout; forming a gate dielectric on the semiconductor substrate in the cutout; providing a gate electrode in the at least one cutout in the at lest one sacrificial layer; and removing the at least one sacrificial layer for the uncovering the gate electrode surrounded by the sidewall spacer. A semiconductor device is also provided.
6 Citations
11 Claims
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1. A method for fabricating a semiconductor gate structure comprising:
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depositing at least one sacrificial layer on a semiconductor substrate;
patterning the at least one sacrificial layer to form at least one cutout in the at least one sacrificial layer for uncovering the semiconductor substrate;
forming a sidewall spacer over sidewalls of the at least one sacrificial layer in the at least one cutout;
forming a gate dielectric on the semiconductor substrate in the cutout;
providing a gate electrode in the at least one cutout in the at least one sacrificial layer; and
removing the at least one sacrificial layer for uncovering the gate electrode surrounded by the sidewall spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a semiconductor substrate;
a gate dielectric on the semiconductor substrate for providing gate insulation;
a gate electrode made of metal arranged above the gate dielectric for gate driving; and
an at least single-layered gate sidewall spacer for lateral encapsulation of the gate electrode, the gate electrode tapering in the direction of the gate dielectric.
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Specification