In-situ analysis method for atomic layer deposition process

• US 20040266011A1
• Filed: 06/24/2004
• Published: 12/30/2004
• Est. Priority Date: 06/26/2003
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jae-cheol, Jung, Ran-ju, Lim, Chang-bin
• Application Number:
  US10/874,565
• Publication Number:
  US 20040266011A1
• Time in Patent Office: Days
• US Class Current: 436/5
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]

Abstract

Provided is an in-situ analysis method for an atomic layer deposition (ALD) process. The provided method includes transferring a substrate to a reaction chamber in a vacuum container, depositing an atomic layer on the upper surface of the substrate, and analyzing the state of the atomic layer to determine the quality of the atomic layer in real time. Using the method decreases failure and the cost for additional analysis.

Claims

1. An in-situ analysis method of an atomic layer deposition (ALD) process, the method comprising:

transferring a substrate to a reaction chamber in a vacuum container and depositing an atomic layer on the upper surface of the substrate; and

analyzing the state of the atomic layer to determine the quality of the atomic layer in real time.

2. The method of claim 1, wherein the transferring of the substrate to the reaction chamber in the vacuum container and the depositing of the atomic layer on the upper surface of the substrate includes:

transferring the substrate to the reaction chamber in the vacuum container;

injecting a source gas into the vacuum container to deposit the atomic layer on the substrate and injecting a transfer gas to exhaust the source gas;

injecting a reactant gas to react with the atomic layer when the exhaustion of the source gas is completed, and injecting the transfer gas to exhaust a reactant material; and

repeating the transferring the substrate depositing the atomic layer and oxidizing the atomic layer until the thickness of the atomic layer becomes a predetermined thickness.

3. The method of claim 2, wherein the transfer gas is a neutral gas comprising nitrogen or argon gas.

4. The method of claim 2, wherein the reactant gas is an oxide gas comprising water, isopropyl alcohol or O₃.

5. The method of claim 1, wherein the state of the atomic layer is selectively analyzed before, during and after the deposition of the atomic layer.

6. The method of claim 1, wherein the transfer of the substrate to the reaction chamber in the vacuum container and the deposition of the atomic layer on the upper surface of the substrate includes analyzing a residual gas before the deposition of the atomic layer using a quadrupole mass spectrometer.

7. The method of claim 1, wherein the analyzing of the state of the atomic layer to determine the quality of the atomic layer in real time includes analyzing a by-product when depositing the atomic layer using a quadrupole mass spectrometer.

8. The method of claim 6, wherein the quadrupole mass spectrometer is connected to the reaction chamber of the vacuum container by a fine pipe on which a gasket preventing the gas from being exhausted is installed.

9. The method of claim 7, wherein the quadrupole mass spectrometer is connected to the reaction chamber of the vacuum container by a fine pipe on which a gasket preventing the gas from being exhausted is installed.

10. The method of claim 1, wherein the thickness and the density of the atomic layer are selectively measured during or after the ALD using an ellipsometer.

11. The method of claim 1, wherein the chemical state of the atomic layer is selectively analyzed during or after the ALD using an X-ray photoelectron spectroscope (XPS).

12. The method of claim 1, wherein the vacuum container comprises a substrate holder on which the substrate is mounted.

13. The method of claim 12, wherein the substrate holder has a thermal expansion coefficient different from the thermal expansion coefficient of the reaction chamber.