Apparatus for atmospheric pressure reactive atom plasma processing for surface modification
First Claim
1. A tool for processing a surface of a workpiece, comprising:
- a plasma processing chamber in which the workpiece can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to perform a plurality of operations to process the surface of the workpiece using reactive atom plasma processing; and
a translator operable to translate at least one of the workpiece and the plasma torch.
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Accused Products
Abstract
Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.
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Citations
20 Claims
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1. A tool for processing a surface of a workpiece, comprising:
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a plasma processing chamber in which the workpiece can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to perform a plurality of operations to process the surface of the workpiece using reactive atom plasma processing; and
a translator operable to translate at least one of the workpiece and the plasma torch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A tool for shaping a surface of a workpiece, comprising:
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a plasma processing chamber in which the workpiece can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to establish an equilibrium in a plasma reaction in the plasma processing chamber, whereby material may be removed from the surface of the workpiece and re-deposited on the surface of the workpiece with the discharge from the plasma torch; and
a translator operable to translate at least one of the workpiece and the plasma torch.
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13. A tool for cleaning a surface of a workpiece, comprising:
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a plasma processing chamber in which the workpiece can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to remove material from the surface of the workpiece using reactive atom plasma processing; and
a translator operable to translate at least one of the workpiece and the plasma torch.
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14. A tool for processing a surface of an optic, comprising:
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a plasma processing chamber in which the optic can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to perform a plurality of operations to process the surface of the optic using reactive atom plasma processing; and
a translator operable to translate at least one of the optic and the plasma torch. - View Dependent Claims (15)
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16. A tool for back-etching a wafer, comprising:
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a plasma processing chamber in which the wafer can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to etch back a surface of the wafer with the discharge from the plasma torch using reactive atom plasma processing; and
a translator operable to translate at least one of the wafer and the plasma torch.
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17. A tool for thinning a wafer, comprising:
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a plasma processing chamber in which the wafer can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to thin the wafer by removing material from a surface of the wafer with the discharge from the plasma torch using reactive atom plasma processing; and
a translator operable to translate at least one of the wafer and the plasma torch.
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18. A tool for thinning a bonded wafer, comprising:
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a plasma processing chamber in which the bonded wafer can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to thin the bonded wafer by removing material from an outer surface of the bonded wafer with the discharge from the plasma torch using reactive atom plasma processing; and
a translator operable to translate at least one of the bonded wafer and the plasma torch.
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19. A tool for shaping a surface of a workpiece at atmospheric pressure, comprising:
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a plasma processing chamber in which the workpiece can be positioned;
a plasma torch included in the processing chamber, wherein the plasma torch is operable to simultaneously remove material from the surface of the workpiece and re-deposit the removed material back onto the surface of the workpiece at atmospheric pressure using reactive atom plasma processing; and
a translator operable to translate at least one of the workpiece and the plasma torch.
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20. A tool for shaping a surface of a workpiece, comprising:
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means for positioning a workpiece in a plasma processing chamber including a plasma torch;
means for translating at least one of the workpiece and the plasma torch; and
means for performing a plurality of operations to process the surface of the workpiece using reactive atom plasma processing.
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Specification