Semiconductor light-emitting device and method for fabricating the device

• US 20050001222A1
• Filed: 07/28/2004
• Published: 01/06/2005
• Est. Priority Date: 08/25/1999
• Status: Active Grant

• Current Assignee: Xiamen San'An Optoelectronics Co.Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Nakatsu, Hiroshi, Kurahashi, Takahisa, Murakami, Tetsurou, Hosoba, Hiroyuki
• Granted Patent: US 7,348,195 B2
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

An n-type AlAs/n-type Al_0.5Ga_0.5As DBR layer and a p-type (Al_0.2Ga_0.8)_0.5In_0.5P/p-type Al_0.5In_0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al_0.5Ga_0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.

Claims

1-3. -3. (Canceled)

4. A method for fabricating a semiconductor light-emitting device comprising a resonator including a pair of multi-layer reflection films formed with interposition of a specified interval on a GaAs substrate and a light-emitting layer formed in a belly position of a standing wave in the resonator, the method comprising:

a process for forming a semiconductor layer having one or more layers on the multi-layer reflection film located on the opposite side of the GaAs substrate with respect to the light-emitting layer; and

a process for roughening a surface of an uppermost layer of the semiconductor layer.

5. A semiconductor light-emitting device fabricating method as claimed in claim 4, wherein

the roughening of the surface of the uppermost layer of the semiconductor layer is performed by forming a light-diffusing pattern by photolithography and etching.

6. A semiconductor light-emitting device fabricating method as claimed in claim 4, wherein

the roughening of the surface of the uppermost layer of the semiconductor layer is performed by abrasion.

7. A semiconductor light-emitting device fabricating method as claimed in claim 4, wherein

the semiconductor layer is formed of Al_yGa_zIn_1-y-zP (0≦

y≦

1, 0≦

z≦

1), and the roughening of the surface of the uppermost layer of the semiconductor layer is performed by scalding at least the semiconductor layer in hydrochloric acid.

8. A method for fabricating a semiconductor light-emitting device comprising a resonator including a pair of multi-layer reflection films formed with interposition of a specified interval on a GaAs substrate and a light-emitting layer formed in a belly position of a standing wave in the resonator, the method comprising:

a process for forming a semiconductor layer having one or more layers including a layer comprising Al_yGa_zIn_1-y-zP (0≦

y≦

1, 0≦

z≦

1) whose lattice constant differs from the GaAs substrate by 0.5% or more on a multi-layer reflection film located on the opposite side of the GaAs substrate with respect to the light-emitting layer, thereby roughening a surface of an uppermost layer of the semiconductor layer.