Light-emitting device and electric apparatus

• US 20050001541A1
• Filed: 08/02/2004
• Published: 01/06/2005
• Est. Priority Date: 05/06/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 7,679,092 B2
• Time in Patent Office: Days
• US Class Current: 313/503
• CPC Class Codes: H05B 33/02 Details
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/80524 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers

Abstract

A light shield film is provided adjacent to an anode of an EL element that consists of the anode, an EL layer, and a cathode. The anode and the cathode are transparent or semitransparent to visible light and hence transmit EL light. With this structure, ambient light is absorbed by the light shield film and does not reach an observer. This prevents an external view from appearing on the observation surface.

Claims

1-48. -48. (Canceled)

49. A light-emitting device comprising:

an electroluminescence element formed over a substrate, the electroluminescence element comprising an anode, a cathode, and an electroluminescence layer formed between the anode and the cathode;

a cluster comprising a group-1 or group-2 element in the periodic table, formed in contact with the electroluminescence element; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate.

50. The light-emitting device according to claim 49, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

51. The light-emitting device according to claim 49, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

52. A light-emitting device comprising:

an electroluminescence element formed over a substrate, the electroluminescence element comprising an anode, an electroluminescence layer formed on the anode, and a cathode formed on the electroluminescence element;

a cluster comprising a group-1 or group-2 element in the periodic table, formed between the electroluminescence element and the cathode; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate.

53. The light-emitting device according to claim 52, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

54. The light-emitting device according to claim 52, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

55. A light-emitting device comprising:

an electroluminescence element formed over a substrate, the electroluminescence element comprising an cathode, an electroluminescence layer formed on the cathode, and a anode formed on the electroluminescence element;

a cluster comprising a group-1 or group-2 element in the periodic table, formed between the electroluminescence element and the cathode; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate.

56. The light-emitting device according to claim 55, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

57. The light-emitting device according to claim 55, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

58. A light-emitting device comprising:

an electroluminescence element formed over a substrate, the electroluminescence element comprising a first electrode, a second electrode, and an electroluminescence layer formed between the first and second electrodes;

a cluster comprising a group-1 or group-2 element in the periodic table, formed between the electroluminescence element and the first electrode; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate,

wherein the first electrode is transparent.

59. The light-emitting device according to claim 58, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

60. The light-emitting device according to claim 58, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

61. A light-emitting device comprising:

an electroluminescence element formed over a substrate, the electroluminescence element comprising an anode, a cathode, and an electroluminescence layer between the anode and the cathode;

a cluster comprising a group-1 or group-2 element in the periodic table, formed in contact with the electroluminescence element; and

a light shield film formed in contact with the electroluminescence element, formed over the substrate,

wherein the cathode comprises a first layer in contact with the electroluminescence layer and a second layer in contact with the first layer, and

wherein the first layer comprises a metal containing a group-1 or group-2 element in the periodic table, and the second layer comprises an oxide conductive film.

62. The light-emitting device according to claim 61, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

63. The light-emitting device according to claim 61, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

64. A camera comprising:

an image receiving section; and

an display unit,

the display unit comprising;

an electroluminescence element formed over a substrate, the electroluminescence element comprising an anode, a cathode, and an electroluminescence layer formed between the anode and the cathode;

a cluster comprising a group-1 or group-2 element in the periodic table, formed in contact with the electroluminescence element; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate.

65. A camera according to claim 64, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

66. A camera according to claim 64, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

67. A camera comprising:

an image receiving section; and

an display unit,

the display unit comprising;

an electroluminescence element formed over a substrate, the electroluminescence element comprising a first electrode, a second electrode, and an electroluminescence layer formed between the first and second electrodes;

a cluster comprising a group-1 or group-2 element in the periodic table, formed between the electroluminescence element and the first electrode; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate,

wherein the first electrode is transparent.

68. A camera according to claim 67, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

69. A camera according to claim 67, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

70. A cellular phone comprising:

a sound output section;

a sound input section; and

an display unit,

the display unit comprising;

an electroluminescence element formed over a substrate, the electroluminescence element comprising an anode, a cathode, and an electroluminescence layer formed between the anode and the cathode;

a cluster comprising a group-1 or group-2 element in the periodic table, formed in contact with the electroluminescence element; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate.

71. A cellular phone according to claim 70, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

72. A cellular phone according to claim 70, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

73. A cellular phone a comprising:

a sound output section;

a sound input section; and

an display unit,

the display unit comprising;

an electroluminescence element formed over a substrate, the electroluminescence element comprising a first electrode, a second electrode, and an electroluminescence layer formed between the first and second electrodes;

a cluster comprising a group-1 or group-2 element in the periodic table, formed between the electroluminescence element and the first electrode; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate,

wherein the first electrode is transparent.

74. A cellular phone according to claim 73, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

75. A cellular phone according to claim 73, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

76. A computer comprising:

manipulation switches; and

an display unit,

the display unit comprising;

an electroluminescence element formed over a substrate, the electroluminescence element comprising an anode, a cathode, and an electroluminescence layer formed between the anode and the cathode;

a cluster comprising a group-1 or group-2 element in the periodic table, formed in contact with the electroluminescence element; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate.

77. A computer according to claim 76, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

78. A computer according to claim 76, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.

79. A computer a comprising:

manipulation switches; and

an display unit,

the display unit comprising;

an electroluminescence element formed over a substrate, the electroluminescence element comprising a first electrode, a second electrode, and an electroluminescence layer formed between the first and second electrodes;

a cluster comprising a group-1 or group-2 element in the periodic table, formed between the electroluminescence element and the first electrode; and

a light shield film formed in contact with said electroluminescence element, formed over said substrate,

wherein the first electrode is transparent.

80. A computer according to claim 79, wherein the light shield film is a film selected from the group consisting of an insulating film dispersed with metal particles or carbon particles, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film, and a semiconductor film.

81. A computer according to claim 79, wherein at least one thin film transistor formed over said substrate is electrically connected to said anode or said cathode.