Lithographic apparatus and device manufacturing method

• US 20050002003A1
• Filed: 05/18/2004
• Published: 01/06/2005
• Est. Priority Date: 05/19/2003
• Status: Abandoned Application

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hoogkamp, Jan Frederik, Klomp, Albert Jan Hendrik, Franssen, Johannes Hendrikus Gertrudis
• Application Number:
  US10/847,656
• Publication Number:
  US 20050002003A1
• Time in Patent Office: Days
• US Class Current: 355/30
• CPC Class Codes: G03F 7/70741 Handling masks outside exposure position, e.g. reticle libraries
• CPC Class Codes: G03F 7/7075 Handling workpieces outside exposure position, e.g. SMIF box
• CPC Class Codes: G03F 7/70808 Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
• CPC Class Codes: G03F 7/70933 Purge, e.g. exchanging fluid or gas to remove pollutants
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber

Abstract

The present invention relates to a lithographic projection apparatus and a method for transferring an object via a load lock between a lithography patterning chamber and a second environment. The load lock forms an inner space that is enclosed by a wall that forms the inner space. The load lock includes a first door that faces the lithography patterning chamber and a second door that faces the second environment. The load lock is at least during part of the transfer vented with a gas that is essentially free from at least one of particles, oxygen, hydrocarbon, and H₂O.

Claims

1. A lithographic projection apparatus comprising:

a radiation system to provide a beam of radiation;

a lithography patterning chamber comprising

a support constructed to support a patterning device, the patterning device serving to pattern the beam of radiation according to a desired pattern;

a substrate table for holding a substrate; and

a projection system for projecting the patterned beam onto a target portion of the substrate; and

a load lock for transferring an object from the lithography patterning chamber to a second environment or for transferring the object from the second environment to the lithography patterning chamber, the load lock defining a chamber and comprising a first door facing the lithography patterning chamber, and a second door facing the second environment, and the load lock further comprising a gas inlet for venting the load lock; and

a gas supply that supplies, at least during part of the transfer of the object, a gas to the gas inlet, the gas being essentially free from at least one of particles, oxygen, hydrocarbon, and H₂O.

2. A lithographic projection apparatus according to claim 1, wherein the lithography patterning chamber has a first pressure and the second environment has a second pressure, the first pressure being lower than the second pressure.

3. A lithographic projection apparatus according to claim 1, wherein the load lock further comprises a gas outlet connected to a pump that pumps gas out of the load lock via the gas outlet.

4. A lithographic projection apparatus according to claim 3, wherein the gas outlet is connected to the gas supply.

5. A lithographic projection apparatus according to claim 2, wherein the load lock is vented to a third pressure that is higher than the second pressure.

6. A lithographic projection apparatus according to claim 1, wherein the load lock is vented when the second door is open.

7. A lithographic projection apparatus according to claim 1, wherein the gas is selected from the group consisting of N₂ gas, Ar gas, and synthetic air.

8. A device manufacturing method comprising:

providing a substrate that is at least partially covered by a layer of radiation-sensitive material in a lithographic patterning chamber;

projecting a patterned beam of radiation onto a target portion of the layer of radiation-sensitive material disposed on the substrate;

transferring an object from and to said lithography patterning chamber via a load lock, the load lock defining a chamber and comprising a first door facing the lithography patterning chamber and a second door facing a second environment; and

venting the load lock with a gas that is essentially free from at least one of particles, oxygen, hydrocarbon, and H₂O during at least part of the transfer.

9. A method according to claim 8, wherein the lithography patterning chamber has a first pressure and the second environment has a second pressure, the first pressure being lower than the second pressure.

10. A method according to claim 9, wherein transferring the object from the lithography patterning chamber to the second environment comprises:

pumping down the load lock to substantially equal to or less than the first pressure;

opening the first door;

transferring the object from the lithography patterning chamber into the load lock;

closing the first door;

venting the load lock with a gas that is essentially free from at least one from the group consisting of particles, oxygen, hydrocarbon and H₂O to substantially equal or to more than the second pressure;

opening the second door; and

transferring the object to the second environment.

11. A method according to claim 9, wherein the load lock is vented to a third pressure that is higher than the second pressure.

12. A method according to claim 9, wherein the load lock is vented when the second door is open.

13. A method according to claim 8, wherein the object is at least one from the group consisting of a mask and a wafer.

14. A method according to claim 8, where the gas is selected from the group consisting of N₂ gas, Ar gas, and synthetic air.

15. A device manufacturing method comprising:

providing a substrate that is at least partially covered by a layer of radiation-sensitive material in a lithography patterning chamber;

providing a beam of radiation using a radiation system;

patterning the beam of radiation with a patterning device;

projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material; and

transferring an object from and to said lithography patterning chamber via a load lock, the load lock defining a chamber and comprising a first door facing the lithography patterning chamber and a second door facing a second environment, the object being one of said substrate and said patterning device; and

venting the load lock with a gas that is essentially free from at least one from the group consisting of particles, oxygen, hydrocarbon, and H₂O, during at least part of the transfer.