Writing control method and writing control system of semiconductor storage device, and portable electronic apparatus
First Claim
1. A writing control method of sequentially writing data into a semiconductor storage device, the semiconductor storage device including a memory system having:
- (a) a memory array having a plurality of memory elements each having;
a gate electrode provided on a semiconductor layer with an intervening gate insulating film;
a channel region provided beneath the gate electrode;
a diffusion region provided on both sides of the channel region, having an opposite polarity to the channel region; and
a memory functioning member, provided on both sides of the gate electrode, having a function of holding electric charges;
(b) a page buffer circuit including a first plane and a second plane; and
(c) a memory control circuit controlling writing with respect to the memory array and being capable of accessing the page buffer circuit, the writing control method comprising;
a first step of writing first data into the first plane;
a second step of controlling the memory control circuit to write the first data having been written into the first plane into the memory array;
a third step of writing second data into the second plane while the first data having been written into the first plane is written into the memory array; and
a fourth step of controlling the memory control circuit to write the second data having been written into the second plane into the memory array.
1 Assignment
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Accused Products
Abstract
A writing control system providing high-speed writing to a nonvolatile semiconductor storage device, includes (a) a plurality of memory elements each having: a gate electrode provided on a semiconductor layer with an intervening gate insulating film; a channel region provided beneath the gate electrode; a diffusion region provided on both sides of the channel region, having an opposite polarity to the channel region; and a memory functioning member, provided on both sides of the gate electrode, having a function of holding electric charges, (b) a memory array including a page buffer circuit, and (c) CPU controlling writing to the memory array. The CPU loads a first plane of the page buffer circuit with a first byte of data and writes with the first byte of data stored in the first plane. Further, the CPU writes a second byte of data into the second plane and writes the second byte of data having been stored in the second plane while writing the first byte of data having been stored in the first plane into the memory array.
152 Citations
43 Claims
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1. A writing control method of sequentially writing data into a semiconductor storage device,
the semiconductor storage device including a memory system having: - (a) a memory array having a plurality of memory elements each having;
a gate electrode provided on a semiconductor layer with an intervening gate insulating film;
a channel region provided beneath the gate electrode;
a diffusion region provided on both sides of the channel region, having an opposite polarity to the channel region; and
a memory functioning member, provided on both sides of the gate electrode, having a function of holding electric charges;
(b) a page buffer circuit including a first plane and a second plane; and
(c) a memory control circuit controlling writing with respect to the memory array and being capable of accessing the page buffer circuit,the writing control method comprising;
a first step of writing first data into the first plane;
a second step of controlling the memory control circuit to write the first data having been written into the first plane into the memory array;
a third step of writing second data into the second plane while the first data having been written into the first plane is written into the memory array; and
a fourth step of controlling the memory control circuit to write the second data having been written into the second plane into the memory array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- (a) a memory array having a plurality of memory elements each having;
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9. A writing control system where data are sequentially written into a semiconductor storage device,
the semiconductor storage device including a memory system having: - (a) a memory array having a plurality of memory elements each having;
a gate electrode provided on a semiconductor layer with an intervening gate insulating film;
a channel region provided beneath the gate electrode;
a diffusion region provided on both sides of the channel region, having an opposite polarity to the channel region; and
a memory functioning member, provided on both sides of the gate electrode, having a function of holding electric charges;
(b) a page buffer including a first plane and a second plane; and
(c) a memory control circuit controlling writing with respect to the memory array and being capable of accessing the page buffer,the writing control system comprising;
first plane writing means writing a first byte of data into the first plane;
first writing control means controlling the memory control circuit to write the first byte of data having been written into the first plane into the memory array;
second plane writing means writing a second byte of data into the second plane while the first byte of data having been written into the first plane is written into the memory array; and
second writing control means controlling the memory control circuit to write the second byte of data having been written into the second plane into the memory array. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
- (a) a memory array having a plurality of memory elements each having;
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17. A writing control system where data are written into a semiconductor storage device,
the semiconductor storage device including a memory system having: - (a) a memory array having a plurality of memory elements each having;
a gate electrode provided on a semiconductor layer with an intervening gate insulating film;
a channel region provided beneath the gate electrode;
a diffusion region provided on both sides of the channel region, having an opposite polarity to the channel region; and
a memory functioning member, provided on both sides of the gate electrode, having a function of holding electric charges;
(b) a page buffer including a first plane and a second plane; and
(c) a memory control circuit controlling writing with respect to the memory array and being capable of accessing the page buffer,the writing control system comprising;
first plane writing means writing a byte of data into the first plane by providing a set of first data signals to the memory system;
first writing control means controlling the memory control circuit to write the byte of data having been written into the first plane into the memory array by providing command signals to the memory system, the command signal representing writing from the page buffer to the memory array;
second plane writing means, while the memory control circuit performs writing to the memory array, writing a block of data into the second plane by providing data signals representing a block of data to the memory system; and
second writing control means controlling the memory control circuit to write the block of data having been written into the second plane into the memory array by providing command signals to the memory system, the command signal representing writing from the page buffer to the memory array. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
- (a) a memory array having a plurality of memory elements each having;
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28. A writing control system where data are sequentially written into a semiconductor storage device,
the semiconductor storage device including a memory system having: - (a) a memory array having a plurality of memory elements each having;
a gate electrode provided on a semiconductor layer with an intervening gate insulating film;
a channel region provided beneath the gate electrode;
a diffusion region provided on both sides of the channel region, having an opposite polarity to the channel region; and
a memory functioning member, provided on both sides of the gate electrode, having a function of holding electric charges;
(b) a page buffer including a first plane and a second plane; and
(c) a memory control circuit controlling writing with respect to the memory array and being capable of accessing the page buffer,the writing control system comprising;
first plane writing means writing a first block of data into the first plane by providing a set of first data signals representing the first block of data to the memory system;
first writing control means controlling the memory control circuit to write the first block of data having been written into the first plane into the memory array by providing command signals to the memory system, the command signal representing writing from the page buffer to the memory array;
second plane writing means, while the memory control circuit performs writing to the memory array, writing a second block of data into the second plane by sequentially providing data signals representing the second block of data to the memory system; and
second writing control means controlling the memory control circuit to write the second block of data having been written into the second plane into the memory array by providing command signals to the memory system, the command signal representing writing from the page buffer to the memory array. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
- (a) a memory array having a plurality of memory elements each having;
Specification