Method of creating a high performance organic semiconductor device

• US 20050003574A1
• Filed: 07/01/2004
• Published: 01/06/2005
• Est. Priority Date: 08/12/2002
• Status: Abandoned Application

• Current Assignee: Precision Dynamics Corporation (Brady Corporation)
• Original Assignee: Precision Dynamics Corporation (Brady Corporation)
• Inventors: Ma, Liping, Yang, Yang, Beigel, Michael L.
• Application Number:
  US10/884,317
• Publication Number:
  US 20050003574A1
• Time in Patent Office: Days
• US Class Current: 438/99
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 10/23 Schottky diodes
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/143 Polyacetylene; Derivatives thereof
• CPC Class Codes: H10K 85/154 Ladder-type polymers
• CPC Class Codes: H10K 85/211 Fullerenes, e.g. C60
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/60 Organic compounds having low molecular weight H10K85/10 - H10K85/50 take precedence
• CPC Class Codes: H10K 85/611 : Charge transfer complexes
• CPC Class Codes: H10K 85/615 : Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
• CPC Class Codes: H10K 85/631 : Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Abstract

A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C₆₀, and copper is described, as well as example insulated gate field effect transistors.

Claims

1-60. -60. (Canceled)

61. A method of creating a high performance insulated gate field effect transistor, the method comprising:

providing the insulated gate field effect transistor, the insulated gate field effect transistor comprising a substrate, an organic semiconductor formed on the substrate, an insulator formed on the organic semiconductor, a source formed on the organic semiconductor, a gate formed on the insulator, and drain formed on the organic semiconductor; and

subjecting the source to energy sufficient to create an ohmic contact between the source and the organic semiconductor.

62. The method of claim 61 wherein the step of providing an insulated gate field effect transistor further comprises:

providing the substrate;

forming the organic semiconductor on the substrate;

forming the insulator on the organic semiconductor;

forming the source on the organic semiconductor;

forming the gate on the insulator; and

forming the drain on the organic semiconductor.

63. The method of claim 61 wherein the organic semiconductor includes an organic material, the organic material including a fullerene.

64. The method of claim 63 wherein the organic material comprises a member of the C₆₀ family.

65. The method of claim 63 wherein the organic material comprises a member of the C₇₀ family.

66. The method of claim 63 wherein the organic material comprises a member of the C₈₀ family.

67. The method of claim 61 wherein the gate includes a metal.

68. The method of claim 67 wherein the gate includes aluminum or gold.

69. The method of claim 61 wherein the drain includes a metal.

70. The method of claim 69 wherein the drain includes copper.

71. The method of claim 61 wherein the source includes a metal.

72. The method of claim 71 wherein the source includes copper.

73. The method of claim 71 wherein the metal of the source is diffused into the organic semiconductor to form a low resistance contact between the source and the organic semiconductor.

74. The method of claim 69 wherein the metal of the drain is diffused into the organic semiconductor to form a low resistance contact between the drain and the organic semiconductor.

75. The method of claim 61 wherein the source is diffused into the organic semiconductor.

76. The method of claim 61 wherein the drain is diffused into the organic semiconductor.

77. A method for creating a high performance insulated gate field effect transistor, comprising the steps of:

providing the insulated gate field effect transistor, the insulated gate field effect transistor comprising a substrate, an organic semiconductor formed on the substrate, an insulator formed on the organic semiconductor, a source formed on the organic semiconductor, a gate formed on the insulator, and a drain formed on the organic semiconductor;

subjecting the source to energy sufficient to create an ohmic contact between the source and the organic semiconductor; and

diffusing the source into the organic semiconductor.

78. The method of claim 77 wherein the step of providing an insulated gate field effect transistor further comprises the steps of:

forming the organic semiconductor on the substrate;

forming the insulator on the organic semiconductor;

forming the source on the organic semiconductor;

forming the gate on the insulator; and

forming the drain on the organic semiconductor.

79. The method of claim 77 wherein the organic semiconductor includes an organic material, comprising a fullerene.

80. The method of claim 79 wherein the organic material comprises a member of the C₆₀ family.

81. The method of claim 79 wherein the organic material comprises a member of the C₇₀ family.

82. The method of claim 79 wherein the organic material comprises a member of the C₈₀ family.

83. The method of claim 77 wherein the gate includes a metal.

84. The method of claim 83 wherein the metal comprises aluminum or gold.

85. The method of claim 77 wherein the drain includes a metal.

86. The method of claim 85 wherein the metal comprises copper.

87. The method of claim 85 wherein the metal of the drain is diffused into the organic semiconductor to form a low resistance contact between the drain and the organic semiconductor.

88. The method of claim 77 wherein the drain is diffused into the organic semiconductor.

89. The method of claim 77 wherein the source includes a metal.

90. The method of claim 89 wherein the metal comprises copper.

91. The method of claim 89 wherein the metal of the source is diffused into the organic semiconductor to form a low resistance contact between the source and the organic semiconductor.

92. A method for creating a high performance insulated gate field effect transistor, comprising the steps of:

providing the insulated gate field effect transistor, the insulated gate field effect transistor comprising a substrate, an organic semiconductor formed on the substrate, an insulator formed on the organic semiconductor, a metal source formed on the organic semiconductor, a gate formed on the insulator, and a metal drain formed on the organic semiconductor;

subjecting the source and the drain to energy sufficient to create low resistance ohmic contacts between the organic semiconductor and, respectively, the source and the drain; and

diffusing the metal source and the metal drain into the organic semiconductor.

93. The method of claim 92 wherein the step of providing an insulated gate field effect transistor, further comprising the steps of:

forming the organic semiconductor on the substrate;

forming the insulator on the organic semiconductor;

forming the source on the organic semiconductor;

forming the gate on the insulator; and

forming the drain on the organic semiconductor.

94. The method of claim 92 wherein the organic semiconductor includes an organic material comprising a fullerene.

95. The method of claim 94 wherein the organic material comprises a member of the C₆₀ family.

96. The method of claim 94 wherein the organic material comprises a member of the C₇₀ family.

97. The method of claim 94 wherein the organic material comprises a member of the C₈₀ family.

98. The method of claim 92 wherein the gate includes a metal.

99. The method of claim 98 wherein the metal is comprised of aluminum or gold.

100. The method of claim 92 wherein the metal drain is comprised of copper.

101. The method of claim 92 wherein the metal source is comprised of copper.