Surface wave plasma treatment apparatus using multi-slot antenna

• US 20050005854A1
• Filed: 06/18/2004
• Published: 01/13/2005
• Est. Priority Date: 07/08/2003
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Suzuki, Nobumasa
• Application Number:
  US10/870,067
• Publication Number:
  US 20050005854A1
• Time in Patent Office: Days
• US Class Current: 118/723.MW
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence

Abstract

A surface wave plasma treatment apparatus according to the present invention is a surface wave plasma treatment apparatus composed of a plasma treatment chamber including a part where the chamber is formed as a dielectric window capable of transmitting a microwave, a supporting body of a substrate to be treated, the supporting body set in the plasma treatment chamber, a plasma treatment gas introducing unit for introducing a plasma treatment gas into the plasma treatment chamber, an exhaust unit for evacuating an inside of the plasma treatment chamber, and a microwave introducing unit using a multi-slot antenna arranged on an outside of the dielectric window to be opposed to the supporting unit of the substrate to be treated, wherein slots arranged radially and slots arranged annularly are combined as slots.

Claims

1. A surface wave plasma treatment apparatus, comprising:

a plasma treatment chamber including a part where said chamber is formed as a dielectric window capable of transmitting a microwave;

a supporting body of a substrate to be treated, said supporting body set in said plasma treatment chamber;

plasma treatment gas introducing means for introducing a plasma treatment gas into said plasma treatment chamber;

exhaust means for evacuating an inside of said plasma treatment chamber; and

microwave introducing means using a multi-slot antenna arranged on an outside of said dielectric window to be opposed to said supporting means of said substrate to be treated, wherein

slots arranged radially along which surface waves propagate into peripheral directions and slots arranged annularly along which the surface waves propagate into radial directions are combined as slots.

2. A surface wave plasma treatment apparatus according to claim 1, wherein said microwave introducing means is a multi-slot antenna including an endless ring-shaped waveguide having an H surface on which said slots are formed.

3. A surface wave plasma treatment apparatus according to claim 1, wherein each interval of centers of said slots arranged radially is odd times as long as a half wavelength of a surface wave.

4. A surface wave plasma treatment apparatus according to claim 1, wherein a diameter of a circle formed by connecting arcs of said slots arranged annularly with each other is even times as long as a half wavelength of a surface wave.

5. A plasma treatment apparatus according to claim 1, wherein a plasma distribution in a radial direction is adjusted by changing microwave emissivities of both of said slots arranged radially and said slots arranged annularly relatively.

6. A surface wave plasma treatment apparatus according to claim 5, wherein the adjustment of a plasma distribution is performed by changing lengths of said slots arranged radially and central angles of said slots arranged annularly.

7. A surface wave plasma treatment apparatus according to claim 5, wherein the adjustment of a plasma distribution is performed by changing widths of said slots arranged radially and said slots arranged annularly.

8. A surface wave plasma treatment apparatus according to claim 5, wherein the adjustment of a plasma distribution is performed by changing thicknesses of said slots arranged radially and said slots arranged annularly.