Solid-state image sensor, production method for solid-state image sensor, and camera using solid-state image sensor
First Claim
1. A solid-state image sensor comprising in each pixel:
- a semiconductor region of a first conductive type provided on a semiconductor substrate;
a photodiode provided in the semiconductor region;
a transfer gate for transferring photocharges accumulated in the photodiode; and
a diffusion region for receiving the transferred photocharges;
wherein the photodiode includes a first accumulation region composed of a semiconductor of a second conductive type, and a second accumulation region provided in contact with the first accumulation region and at a position deeper than the first accumulation region, and composed of a semiconductor of the second conductive type, and wherein the first accumulation region extends toward and end of the transfer gate, and the second accumulation region is separate from the transfer gate.
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Accused Products
Abstract
A solid-state image sensor includes, in each pixel, a p-type well provided on a semiconductor substrate, a photodiode provided in the p-type well, a transfer gate for transferring photocharges accumulated in the photodiode, and an n-type diffusion region for receiving the transferred photocharges. The photodiode includes a first n-type accumulation region, and a second n-type accumulation region having a concentration higher than that of the first accumulation region and provided at a position deeper than the first accumulation region. The first accumulation region extends toward an end of the transfer gate, and the second accumulation region is separate from the transfer gate.
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Citations
16 Claims
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1. A solid-state image sensor comprising in each pixel:
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a semiconductor region of a first conductive type provided on a semiconductor substrate;
a photodiode provided in the semiconductor region;
a transfer gate for transferring photocharges accumulated in the photodiode; and
a diffusion region for receiving the transferred photocharges;
wherein the photodiode includes a first accumulation region composed of a semiconductor of a second conductive type, and a second accumulation region provided in contact with the first accumulation region and at a position deeper than the first accumulation region, and composed of a semiconductor of the second conductive type, and wherein the first accumulation region extends toward and end of the transfer gate, and the second accumulation region is separate from the transfer gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A camera having a solid-state image sensor, wherein the solid-state image sensor comprises in each pixel:
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a semiconductor region of a first conductive type provided on a semiconductor substrate;
a photodiode provided in the semiconductor region;
a transfer gate for transferring photocharges accumulated in the photodiode; and
a diffusion region for receiving the transferred photocharges;
wherein the photodiode includes a first accumulation region composed of a semiconductor of a second conductive type, and a second accumulation region provided in contact with the first accumulation region and at a position deeper than the first accumulation region, and composed of a semiconductor of the second conductive type, and wherein the first accumulation region extends toward and end of the transfer gate, and the second accumulation region is separate from the transfer gate.
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10. A production method for a solid-state image sensor comprising, for each pixel, the steps of:
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providing a semiconductor region of a first conductive type on a semiconductor substrate;
providing a photodiode in the semiconductor region;
providing a transfer gate for transferring photocharges accumulated in the photodiode; and
providing a diffusion region for receiving the transferred photocharges, wherein the step of providing a photodiode includes providing a first accumulation region composed of a semiconductor of a second conductive type, and providing a second accumulation region in contact with the first accumulation region and at a position deeper than the first accumulation region, and composed of a semiconductor of the second conductive type, and wherein the step of providing a photodiode further includes forming the first accumulation region by ion implantation satisfying 0°
≦
α
<
90° and
270°
<
α
≦
360°
, and forming the second accumulation region by ion implantation satisfying 90°
≦
α
≦
270°
, where a represents an angle defined between an x-axis, indicating a gate length direction of the transfer gate, and a projected ion implantation direction, obtained by projecting an ion implantation direction onto an xy-plane including the x-axis and a y-axis indicating a gate width direction of the transfer gate. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification