Liquid crystal display device and fabrication method thereof
First Claim
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1. A liquid crystal display device comprising:
- a pair of substrates;
a liquid crystal layer interposed between said pair of substrates;
a plurality of drain wiring lines and a plurality of gate wiring lines being formed one of said pair of substrates;
at least one pixel is composed in respective regions surrounded by said drain wiring lines and said gate wiring lines;
a lower electrode, a dielectric film, a protective film, and an upper electrode being formed at location corresponding to said at least one pixel in this order;
a semiconductor layer formed between said dielectric film and said protective film;
a contact hole is provided by perforating said protective film, and said upper electrode contacts with said semiconductor layer through said contact hole.
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Abstract
The present invention provides a novel photolithography processes using photoresist pattern having at least two areas which has different thickness from each other for a fabrication method for a liquid crystal display device having reversed staggered and channel-etched type thin film transistors, reduce a number of photolithography processes required for whole of the fabrication process of the liquid crystal display device, and improve brightness of the liquid crystal display device.
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Citations
6 Claims
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1. A liquid crystal display device comprising:
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a pair of substrates;
a liquid crystal layer interposed between said pair of substrates;
a plurality of drain wiring lines and a plurality of gate wiring lines being formed one of said pair of substrates;
at least one pixel is composed in respective regions surrounded by said drain wiring lines and said gate wiring lines;
a lower electrode, a dielectric film, a protective film, and an upper electrode being formed at location corresponding to said at least one pixel in this order;
a semiconductor layer formed between said dielectric film and said protective film;
a contact hole is provided by perforating said protective film, and said upper electrode contacts with said semiconductor layer through said contact hole. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification