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Manufacturing method for semiconductor device

  • US 20050009313A1
  • Filed: 06/04/2004
  • Published: 01/13/2005
  • Est. Priority Date: 06/06/2003
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • a first step of fixedly forming a supporting base on a semiconductor substrate having an internal wire formed thereon, via a resin layer, whereby a laminated body is formed on the semiconductor substrate;

    a second step of removing at least a part of the resin layer and a part of the internal wire, while leaving a part of the laminated body, to thereby form a groove where a part of the internal wire is exposed to the outside;

    a third step of exposing the groove formed in the laminated body to plasma atmosphere for cleaning;

    a fourth step of forming a metal film covering a surface of the laminated body and the groove; and

    a fifth step of patterning the metal film into an outside wire, wherein the plasma atmosphere is plasma atmosphere capable of etching the resin layer.

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