Manufacturing method for semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- a first step of fixedly forming a supporting base on a semiconductor substrate having an internal wire formed thereon, via a resin layer, whereby a laminated body is formed on the semiconductor substrate;
a second step of removing at least a part of the resin layer and a part of the internal wire, while leaving a part of the laminated body, to thereby form a groove where a part of the internal wire is exposed to the outside;
a third step of exposing the groove formed in the laminated body to plasma atmosphere for cleaning;
a fourth step of forming a metal film covering a surface of the laminated body and the groove; and
a fifth step of patterning the metal film into an outside wire, wherein the plasma atmosphere is plasma atmosphere capable of etching the resin layer.
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Accused Products
Abstract
An internal wire is formed via an oxide film on the front surface of a semiconductor substrate so as to extend toward the boundary relative to an adjacent integrated circuit region. An upper supporting base is fixedly formed on the front surface of the semiconductor substrate by means of a resin layer of epoxy adhesive or the like, and a lower supporting base is fixedly formed on the back surface of the semiconductor substrate by means of a resin layer of epoxy adhesive or the like, whereby a laminated body is formed. The resin layer and the internal wire are partially removed, leaving a portion of the laminated body, to thereby form an inverted-V shaped groove (a cut-off groove) where a part of the internal wire is exposed to the outside. Thereafter, the resulting cut-off groove is exposed to plasma atmosphere to thereby dissolve, and thus remove, any remaining resin fragments attached to the exposed end portion of the internal wire.
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Citations
8 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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a first step of fixedly forming a supporting base on a semiconductor substrate having an internal wire formed thereon, via a resin layer, whereby a laminated body is formed on the semiconductor substrate;
a second step of removing at least a part of the resin layer and a part of the internal wire, while leaving a part of the laminated body, to thereby form a groove where a part of the internal wire is exposed to the outside;
a third step of exposing the groove formed in the laminated body to plasma atmosphere for cleaning;
a fourth step of forming a metal film covering a surface of the laminated body and the groove; and
a fifth step of patterning the metal film into an outside wire, wherein the plasma atmosphere is plasma atmosphere capable of etching the resin layer. - View Dependent Claims (5)
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2. A method for manufacturing a semiconductor device, comprising:
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a first step of forming an integrated circuit in each region defined by a scribe line on a front surface of a semiconductor substrate and forming an internal wire extending toward a boundary relative to an adjacent integrated circuit region;
a second step of fixedly forming an upper supporting base on the front surface of the semiconductor substrate via a first insulating resin layer so as to cover an area where the integrated circuit is formed;
a third step of removing the semiconductor substrate along the scribe line and fixedly forming a lower supporting base on a back surface of the semiconductor substrate via a second insulating resin layer, whereby a laminated body is formed on the back surface of the semiconductor substrate;
a fourth step of forming a groove along the scribe line, where a part of the second insulating resin and a part of the internal wire are exposed to the outside, while leaving a part of the upper supporting base;
a fifth step of exposing the groove formed in the laminated body to plasma atmosphere for cleaning;
a sixth step of forming a metal film covering the back surface of the semiconductor substrate and the groove;
a seventh step of patterning the metal film into an outside wire; and
an eighth step of cutting the upper supporting base to thereby divide the laminated body into individual semiconductor devices, wherein the plasma atmosphere is plasma atmosphere capable of etching resin forming the second insulating resin layer. - View Dependent Claims (4, 6, 8)
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3. A method for manufacturing a semiconductor device, comprising:
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a first step of forming an integrated circuit in each region defined by a scribe line on a front surface of a semiconductor substrate and forming an internal wire extending toward a boundary relative to an adjacent integrated circuit region;
a second step of fixedly forming an upper supporting base on the front surface of the semiconductor substrate via a first insulating resin layer so as to cover an area where the integrated circuit is formed;
a third step of forming a groove along the scribe line, where a part of the first insulating resin layer and a part of the internal wire are exposed to outside, while leaving a part of the semiconductor substrate;
a fourth step of exposing the groove to plasma atmosphere for cleaning;
a fifth step of forming a metal film covering the front surface of the semiconductor substrate and the groove;
a sixth step of patterning the metal film into an outside wire;
a seventh step of removing the semiconductor substrate along the scribe line and fixedly forming a lower supporting base on a back surface of the semiconductor substrate via a second insulating resin layer, whereby a laminated body is formed on the back surface of the semiconductor substrate; and
an eighth step of cutting the lower supporting base to thereby divide the laminated body into individual semiconductor devices, wherein the plasma atmosphere is a plasma atmosphere capable of etching resin forming the first insulating resin layer. - View Dependent Claims (7)
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Specification