Method of manufacturing a semiconductor light-emitting device
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Abstract
A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1-xAs layer and the active layer, in this order. Part of the AlxGa1-xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).
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Citations
11 Claims
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1-6. -6. (Canceled)
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6. A method for manufacturing a semiconductor light-emitting device by stacking, on a semiconductor substrate, a plurality of layers including an active layer made of a semiconductor which generates light of a specified wavelength, the method comprising the steps of:
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providing, between the semiconductor substrate and the active layer, an Al rich layer higher in Al ratio than any other layer among the plurality of layers;
dividing into chips a wafer in which the plurality of layers are stacked, thereby making a side face of the Al rich layer exposed; and
oxidizing Al contained in the Al rich layer from the exposed side face, thereby making a peripheral portion of the Al rich layer changed into an AlOy layer. - View Dependent Claims (7, 8, 9, 10)
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11-13. -13. (Canceled)
Specification