Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus

• US 20050016462A1
• Filed: 12/11/2003
• Published: 01/27/2005
• Est. Priority Date: 12/12/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 7,583,020 B2
• Time in Patent Office: Days
• US Class Current: 118/726
• CPC Class Codes: C23C 14/12 Organic material
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 14/246 Replenishment of source material
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: C23C 14/5806 Thermal treatment
• CPC Class Codes: H05B 33/10 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/164 using vacuum deposition
• CPC Class Codes: H10K 71/30 Doping active layers, e.g. electron transporting layers
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/649 Aromatic compounds comprising a hetero atom
• CPC Class Codes: H10K 85/6565 Oxadiazole compounds
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film.

Claims

1. A light emitting apparatus equipped with a light emitting device which has an anode over a substrate having an insulation surface, a layer which includes an organic compound which is in contact with the anode, a cathode which is in contact with the layer including the organic compound, and

the light emitting apparatus characterized in that, in said layer including the organic compound, included is silicon with 1×

10¹⁸−

5×

10²⁰ pieces/cm<sup>−

3</sup>, by SIMS measurement.

2. A film forming apparatus which evaporates an organic compound material from an evaporation source which was placed opposite to a substrate, to carry out film formation over said substrate, and

the film forming apparatus characterized in that, in a film forming chamber in which said substrate is placed, a deposition source which accommodates the organic compound material and means for heating the deposition source are provided, and

said film forming chamber is coupled to a vacuum pumping processing chamber which vacuates an inside of said film forming chamber, and has means which can introduce material gas.

4. The manufacturing apparatus as set forth in claim 2, characterized in that said deposition source is movable in a X direction or a Y direction in the film forming chamber.

5. The manufacturing apparatus as set forth in claim 2, characterized in that, in said film forming chamber, means for heating said substrate is provided.

6. The manufacturing apparatus as set forth in claim 2, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.

7. The manufacturing apparatus as set forth in claim 2, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.

16. The manufacturing apparatus as set forth in claim 4, characterized in that, in said film forming chamber, means for heating said substrate is provided.

19. The manufacturing apparatus as set forth in claim 4, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.

20. The manufacturing apparatus as set forth in claim 5, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.

23. The manufacturing apparatus as set forth in claim 4, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4, SnH4, CH4, C2H2, C2H4, or C6H6.

24. The manufacturing apparatus as set forth in claim 5, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4, SnH4, CH4, C2H2, C2H4, or C6H6.

3. A manufacturing apparatus which has a load chamber, a transfer chamber which was coupled to the load chamber, and a film forming chamber which was coupled to the transfer chamber, and

the manufacturing apparatus characterized in that said transfer chamber has a function of carrying out alignment of a mask and a substrate, and

in the film forming chamber in which said substrate is placed, a deposition source which accommodates an organic compound material and means for heating the deposition source are provided, and

said film forming chamber is coupled to a vacuum pumping processing chamber which vacuates an inside of said film forming chamber, and has means which can introduce material gas.

14. The manufacturing apparatus as set forth in claim 3, characterized in that said deposition source is movable in a X direction or a Y direction in the film forming chamber.

15. The manufacturing apparatus as set forth in claim 3, characterized in that, in said film forming chamber, means for heating said substrate is provided.

17. The manufacturing apparatus as set forth in claim 14, characterized in that, in said film forming chamber, means for heating said substrate is provided.

18. The manufacturing apparatus as set forth in claim 3, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.

21. The manufacturing apparatus as set forth in claim 14, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.

22. The manufacturing apparatus as set forth in claim 3, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4, SnH4, CH4, C2H2, C2H4, or C6H6.

25. The manufacturing apparatus as set forth in claim 14, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4, SnH4, CH4, C2H2, C2H4, or C6H6.

8. A film forming method for having an organic compound deposited over a substrate which was placed in a film forming chamber, and

the film forming method characterized in that, on the occasion that an inside of said film forming chamber is made to be of higher pressure than 1×

10<sup>−

3</sup> Torr, and a film is formed over said substrate by having an organic compound material deposited from a deposition source which was placed opposite to the substrate, material gas is introduced into said film forming chamber at the same time.

10. The film forming method as set forth in claim 8, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.

9. A film forming method for having an organic compound deposited over a substrate which was placed in a film forming chamber, and

the film forming method characterized in that, on the occasion that an inside of said film forming chamber is made to be of higher pressure than 1×

10<sup>−

3</sup> Torr, and a film is formed over said substrate by having an organic compound material deposited from a deposition source which was placed opposite to the substrate, radicalized material gas is introduced into said film forming chamber at the same time.

26. The film forming method as set forth in claim 9, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4, SnH4, CH4, C2H2, C2H4, or C6H6.

11. A film forming method for having an organic compound deposited over a substrate which was placed in a film forming chamber, and

the film forming method characterized in that, on the occasion that an inside of said film forming chamber is made to be of higher pressure than 1×

10<sup>−

3</sup> Torr, and a film is formed over said substrate by having an organic compound material deposited from a deposition source which was placed opposite to the substrate, ionized material is evaporated by plasma at the same time, and over chemically attaching with said organic compound material, film formation is carried out over the substrate.

12. A cleaning method for removing an organic compound attached in a film forming chamber which had a deposition source, and

the cleaning method characterized in that, by generating plasma in the film forming chamber, or by introducing gas, which was ionized by plasma, into the film forming chamber, an inner wall, or anti-attachment preventing means for preventing a film from being formed over the inner wall, or a mask, is cleaned, and by vacuum pumping means, air is discharged.

13. The cleaning method as set forth in claim 12, characterized in that said plasma is generated by exciting one kind or plural kinds of gasses which were selected from Ar, H, F, NF₃, or O.