Ion source apparatus and cleaning optimized method thereof
First Claim
1. A cleaning optimized method in which to remove insulation layers produced by ion source materials accreting to and collecting over each electrode surface of an extraction electrode system, in an ion source apparatus in which plasma is formed by supplying ion source gas to a plasma chamber, and ion beams are extracted from the plasma through the extraction electrode system comprising a plurality of electrodes by means of effect of electric field, wherein the method comprising the steps of:
- supplying rare gas instead of the ion source gas to the plasma chamber thus forming plasma based on the rare gas;
adjusting a setting parameter to change a diameter of ion beam of the rare gas when the ion beam extracted from the plasma chamber collides onto each electrode surface of the extraction electrode system; and
focusing the diameter of the ion beam within an effective range in which intension of sputtering of the insulation layers is maximized thus evenly removing the insulation layers.
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Accused Products
Abstract
An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.
31 Citations
15 Claims
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1. A cleaning optimized method in which to remove insulation layers produced by ion source materials accreting to and collecting over each electrode surface of an extraction electrode system,
in an ion source apparatus in which plasma is formed by supplying ion source gas to a plasma chamber, and ion beams are extracted from the plasma through the extraction electrode system comprising a plurality of electrodes by means of effect of electric field, wherein the method comprising the steps of: -
supplying rare gas instead of the ion source gas to the plasma chamber thus forming plasma based on the rare gas;
adjusting a setting parameter to change a diameter of ion beam of the rare gas when the ion beam extracted from the plasma chamber collides onto each electrode surface of the extraction electrode system; and
focusing the diameter of the ion beam within an effective range in which intension of sputtering of the insulation layers is maximized thus evenly removing the insulation layers. - View Dependent Claims (2, 3, 4, 5, 8, 9)
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6. A cleaning optimized method in which to remove insulation layers produced by ion source materials accreting to and collecting over each electrode surface of an extraction electrode system,
in an ion source apparatus in which plasma is formed by supplying ion source gas to a plasma chamber, and ion beams are extracted from the plasma through the extraction electrode system comprising a plurality of electrodes by means of effect of electric field, wherein the method comprising the steps of: -
supplying rare gas instead of the ion source gas to the plasma chamber thus forming plasma bases on the rare gas;
observing the diameter of the ion beam extracted form the plasma based on the rare gas by setting extraction or accelerate voltage of the extraction electrode system or supply amount of the rare gas to a given value; and
adjusting either the extraction or accelerate voltage of the extraction electrode system or the supply amount of the rare gas so as to maximize intension of sputtering of the insulation layers according to a changing amount of the beam diameter of the ion beam colliding onto the insulation layers. - View Dependent Claims (10)
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7. A cleaning optimized method in which to remove insulation layers produced by ion source materials accreting to and collecting over each electrode surface of an extraction electrode system,
in an ion source apparatus in which plasma is formed by supplying ion source gas to a plasma chamber, and ion beams are extracted from the plasma through the extraction electrode system comprising a plurality of electrodes by means of effect of electric field, wherein the method comprising the steps of: -
supplying rare gas instead of the ion source gas to the plasma chamber thus forming plasma based on the rare gas;
observing the diameter of the ion beam extracted from the plasma based on the rare gas by setting extraction or accelerate voltage of the extraction electrode system or supply amount of the rare gas to a given value; and
adjusting both the extraction or accelerate voltage of the extraction electrode system and the supply amount of the rare gas so as to maximize intension of sputtering of the insulation layers according to a changing amount of the beam diameter of the ion beam colliding onto the insulation layers.
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11. An ion source apparatus, comprising:
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a gas introduction opening for introducing ion source gas;
an outlet opening for extracting ion beam;
a plasma chamber having antenna elements which accelerates electrons and gives the energy to electrons while forming plasma in the chamber;
an extraction electrode system constituting a plurality of electrodes extracting the ion beam from a plasma electrode located at the outlet opening through electric field;
a rare gas supply source supplying the rare gas instead of the ion source gas to the plasma chamber forming plasma based on the rare gas;
means to adjust a setting parameter to change a diameter of the ion beam based on the rare gas when the ion beam extracted from the plasma chamber collides onto each electrode of the extraction electrode system; and
means to determine time and timing to perform cleaning to the electrodes according to relation based on elapsed time of ion implantation and a collecting amount of insulation layers accreting to the electrodes. - View Dependent Claims (12, 13)
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14. A cleaning optimized method comprising the steps of:
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determining timing to supply rare gas such as argon, etc. to a plasma chamber from a rare gas supply source according to tabulation based on both a collecting amount of insulation layers accreting to and collecting over electrodes of an extraction electrode system in elapsed time of ion implantation and a changing amount of the collecting amount by means of sputtering in time taken for cleaning;
generating plasma based on the rare gas in the plasma chamber for cleaning electrodes with optimized gas flow determined via a sampling measurement in a pre-cleaning;
adjusting extraction or accelerate voltage of the extraction electrode system to maximize intension of the sputtering of the insulation layers according to a changing amount of a diameter of ion beam colliding to the insulation layers; and
removing the insulating layers by the ion beam based on the rare gas extracted from the plasma through the sputtering. - View Dependent Claims (15)
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Specification