Resonant impedance matching in microwave and RF device

• US 20050017816A1
• Filed: 06/03/2004
• Published: 01/27/2005
• Est. Priority Date: 06/03/2003
• Status: Active Grant

• Current Assignee: Oewaves Incorporated
• Original Assignee: Oewaves Incorporated
• Inventors: Ilchenko, Vladimir, Morozov, Nikolai
• Granted Patent: US 7,133,180 B2
• Time in Patent Office: Days
• US Class Current: 333/24.R
• CPC Class Codes: H01P 5/02 with invariable factor of coupling H01P5/12 takes precedence choke joints H01P1/04, H01P1/06

Abstract

This application describes devices and techniques for using microwave or RF resonators to provide DC bias, DC blocking, and impedance matching to microwave or RF devices. Both planar and non-planar implementations may be used.

Claims

1. A device, comprising:

a microstrip line having a length of one half of one wavelength of a microwave or RF signal;

a first conductive pad connected to a center of the microstrip line to supply a DC bias to the microstrip line;

a second conductive pad connecting a load to a selected contact location on the microstrip line; and

a conductive feed line that is insulated from the microstrip line and is electrically coupled to supply the microwave or RF signal to or to receive the microwave or RF signal from the microstrip line,

wherein the selected contact location on the microstrip line is selected to provide an impedance matching condition for transferring the microwave or RF signal between the conductive feed line and the second conductive pad.

2. The device as in claim 1, further comprising a pin diode connected to the second conductive pad to receive the DC bias from the microstrip line and to supply the microwave or RF signal to the microstrip line.

3. A method, comprising:

providing a microstrip feed line and a microstrip resonator that are insulated from each other and are coupled to each other to exchange microwave or RF energy therebetween;

supplying a DC bias voltage to a location on the microstrip resonator where the electric field of a resonance microwave or RF signal has a node; and

connecting a load to the microstrip resonator at a location to provide a impedance matching for exchange the microwave or RF energy with the feed line and to receive the DC bias from the microstrip resonator.

4. The method as in claim 3, further comprising using a microstrip line with a length of one half of the wavelength of the microwave or RF energy as the microstrip resonator.

5. The method as in claim 4, further comprising connecting the DC bias voltage at the center of the microstrip line.

6. The method as in claim 5, further comprising selecting the location for connecting the load on the microstrip line to be between the center and an end of the microstrip line.

7. The method as in claim 3, further comprising using an optical detector as the load to receive the DC bias voltage and to supply an output of the detector to the microstrip line.

8. The method as in claim 7, wherein the optical detector is a pin diode.

9. The method as in claim 3, further comprising using a transistor as the load to receive the DC bias voltage.

10. The method as in claim 3, further comprising:

using an optical modulator as the load to receive the DC bias voltage; and

supplying a microwave or RF modulation control signal to the optical modulator via the microstrip line.

11. The method as in claim 3, further comprising using a microstrip line with a length of one quarter of the wavelength of the microwave or RF energy as the microstrip resonator.

12. The method as in claim 11, further comprising connecting the DC bias voltage and the load to one common end of the microstrip line.

13. A device, comprising:

a microstrip feed line to transmit microwave or RF energy;

a microstrip resonator positioned to be insulated from the microstrip feed line and coupled to exchange microwave or RF energy with the microstrip feed line;

a bias conductor wire connected to the microstrip resonator to supply a DC bias voltage to a location on the microstrip resonator where the electric field of a resonant microwave or RF signal has a node; and

a signal conductor wire connected to the microstrip resonator at a location to provide a impedance matching for exchange the microwave or RF energy with the feed line and to receive the DC bias from the microstrip resonator.

14. The device as in claim 13, wherein the microstrip resonator comprises a microstrip line with a length of one half of the wavelength of the microwave or RF energy.

15. The device as in claim 14, wherein the bias conductor wire is connected at the center of the microstrip line.

16. The device as in claim 15, wherein the signal conductor wire is connected between the center and an end of the microstrip line.

17. The device as in claim 13, further comprising an optical detector connected to the bias conductor wire to receive the DC bias voltage and connected to the signal conductor wire to supply an output to the microstrip line.

18. The device as in claim 17, wherein the optical detector is a pin diode.

19. The device as in claim 13, further comprising a transistor connected to the signal conductor wire.

20. The device as in claim 13, further comprising an optical modulator to the signal conductor wire to receive the DC bias voltage and to receive a microwave or RF modulation control signal from the microstrip line.

21. The device as in claim 13, wherein the microstrip resonator comprises a microstrip line with a length of one quarter of the wavelength of the microwave or RF energy.

22. The device as in claim 21, wherein both the signal and bias conductor wires are connected to one common end of the microstrip line.

23. A device, comprising:

a microwave or RF resonator comprising a conductor material and in resonance with a microwave or RF signal at a signal wavelength;

a bias conductor connected to the resonator to supply a DC bias voltage to a location on the resonator where the electric field of the resonant microwave or RF signal has a node;

a microwave or RF circuit operates at the signal wavelength; and

a signal conductor connecting the circuit to the resonator to apply the DC bias voltage to the circuit.

24. The device as in claim 23, wherein the signal conductor is connected to the resonator at a location to provide a impedance matching for exchange the microwave or RF energy between the resonator and the circuit.

25. The device as in claim 23, wherein the resonator is a planar microwave or RF resonator.

26. The device as in claim 25, wherein the resonator is a microstrip line resonator.

27. The device as in claim 26, wherein the microstrip line resonator has a length of one half of the signal wavelength.

28. The device as in claim 27, wherein the microstrip line resonator has a length of one quarter of the signal wavelength.

29. The device as in claim 23, wherein the resonator is a non-planar microwave or RF resonator.

30. The device as in claim 23, wherein the resonator has an interaction length of one half of the signal wavelength.

31. The device as in claim 23, wherein the resonator has an interaction length of one quarter of the signal wavelength.