Exposure with intensity balancing to mimic complex illuminator shape

• US 20050018164A1
• Filed: 07/13/2004
• Published: 01/27/2005
• Est. Priority Date: 02/11/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hansen, Steven George
• Granted Patent: US 7,180,576 B2
• Time in Patent Office: Days
• US Class Current: 355/69
• CPC Class Codes: G03F 7/701 Off-axis setting using an aperture
• CPC Class Codes: G03F 7/70108 Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Abstract

A method for optimizing the optical transfer of a mask pattern onto a substrate using a lithographic apparatus, the lithographic apparatus including an illuminator configured to illuminate the mask pattern, the method including determining a plurality of illumination arrangements for a pupil plane of the illuminator, each of the plurality of illumination arrangements being determined to improve a respective lithographic performance response parameter when illuminating the mask pattern; and adjusting an intensity of a first illumination arrangement of the plurality of illumination arrangements relative to a second illumination arrangement of the plurality of illumination arrangements, the mask pattern to be illuminated with the first and second illumination arrangements. The mask pattern may be illuminated at least once for each of the first and second illumination arrangements or all at once with at least the first illumination arrangement and the second illumination arrangement.

Claims

1. A method for optimizing the optical transfer of a mask pattern onto a substrate using a lithographic apparatus, the lithographic apparatus including an illuminator configured to illuminate the mask pattern, the method comprising:

determining a plurality of illumination arrangements for a pupil plane of the illuminator, each of the plurality of illumination arrangements being determined to improve a respective lithographic performance response parameter when illuminating the mask pattern; and

adjusting an intensity of a first illumination arrangement of the plurality of illumination arrangements relative to a second illumination arrangement of the plurality of illumination arrangements, the mask pattern to be illuminated with the first and second illumination arrangements.

2. A method according to claim 1, further comprising illuminating the mask pattern at least once for each of the first and second illumination arrangements.

3. A method according to claim 1, further comprising illuminating the mask pattern all at once with at least the first illumination arrangement and the second illumination arrangement.

4. A method according to claim 3, wherein a variable transmission illuminator is used to illuminate the substrate with the first and the second illumination arrangements.

5. A method according to claim 1, wherein the determination of the plurality of illumination arrangements is done by computer simulation.

6. A method according to claim 1, wherein the adjusting includes determining an appropriate weighting of the first and second illumination arrangements to optimize the optical transfer of the mask onto the substrate.

7. A method according to claim 6, wherein the determination of the optimum weighting is done by computer simulation or by experimental optimization.

8. A method according to claim 7, wherein determining an appropriate weighting includes experimentally optimizing the weightings determined by computer simulation.

9. A method according to claim 1, wherein determining a plurality of illumination arrangements comprises identifying, for each of the plurality of illumination arrangements, a region in the pupil plane for which it optimizes the optical transfer of the mask pattern.

10. A method according to claim 9, wherein adjusting an intensity of the first illumination arrangement relative to the second illumination arrangement comprises varying the region in the pupil plane of the first or second illumination arrangement.

11. A method according to claim 9, wherein adjusting an intensity of the first illumination arrangement relative to the second illumination arrangement comprises adjusting an exposure dose of the first or second illumination arrangement.

12. A method according to claim 11, wherein adjusting an exposure dose of the first or second illumination arrangement comprises determining a dose weighted average.

13. A method according to claim 1, wherein the lithographic performance response parameter includes depth of focus, exposure latitude, dose-to-size E1:

1, dense to isolated feature bias, lens aberrations, arbitrary feature size bias, sidelobe printing, film loss, sidewall angle, mask error enhancement factor, linear resolution, absolute resolution or any combination thereof.

14. A method according to claim 5, wherein determining a plurality of illumination arrangements for a pupil plane of the illuminator comprises:

selecting a grid of beam points for the pupil plane of the illuminator; and

calculating, for the parameter, responses for individual beam points to an illumination arrangement, each response representing a result of a single or series of simulations using a simulation model.

15. A method according to claim 14, further comprising mapping the responses as a function of individual beam point positions.

16. A method according to claim 14, wherein the simulation model comprises a full resist model, an aerial image model, a lumped parameter model or a variable threshold resist model.

17. A method according to claim 14, wherein the responses comprise a critical dimension of the mask pattern or an intensity threshold and the parameter comprises depth of focus, exposure latitude, dose-to-size E1:

1, dense to isolated feature bias, lens aberrations, arbitrary feature size biases, sidelobe printing, film loss, sidewall angle, mask error enhancement factor, linear resolution, absolute resolution or any combination thereof.

18. A method according to claim 14, wherein the simulation model comprises a resist model calibrated to adequately predict experimental results.

19. A method according to claim 14, wherein the grid is interpolated to increase the grid point density to aid in averaging.

20. A method according to claim 1, further comprising varying a position of an axicon/zoom module or a pyramidal prism relative to the other, varying a position of a diffractive optical element, varying a position of an aperture blade, or adjusting a programmable mirror array.

21. A method according to claim 1, wherein the plurality of illumination arrangements is two illumination arrangements.

22. A method according to claim 1, wherein the plurality of illumination arrangements includes a four pole arrangement and a central pole, said four pole arrangement comprising a Quasar, a C-Quad, a quadrupole, or a rotated quadrupole.

23. A lithographic projection apparatus comprising:

an illumination system to condition a beam of radiation;

a support structure to hold a patterning structure which can be used to pattern the beam of radiation according to a desired pattern;

a substrate table to hold a substrate;

a projection system to project the beam of radiation onto a target portion of the substrate;

a processor to determine a plurality of illumination arrangements for a pupil plane of the illumination system, each of the plurality of illumination arrangements being determined to improve a respective lithographic performance response parameter when illuminating the desired pattern, said processor adjusting an intensity of a first illumination arrangement of the plurality of illumination arrangements relative to a second illumination arrangement of the plurality of illumination arrangements; and

a selectable variable beam controller that is configured to modify a cross-sectional intensity distribution of the beam exiting the illumination system in accordance with the plurality of illumination arrangements determined and adjusted by the processor.

24. A lithographic projection apparatus according to claim 23, wherein the processor is further configured to identify, for each of the plurality of illumination arrangements, a region in the pupil plane for which it optimizes the optical transfer of the mask pattern.

25. A lithographic projection apparatus according to claim 24, wherein the selectable variable beam controller is further configured to vary the region in the pupil plane of the first or second illumination arrangement.

26. A lithographic projection apparatus according to claim 24, wherein the processor is further configured to adjust an exposure dose of the first or second illumination arrangement.

27. A lithographic projection apparatus according to claim 26, wherein the processor is further configured to determine a dose weighted average of the first or second illumination arrangement.

28. A lithographic projection apparatus according to claim 24, wherein the lithographic performance response parameter includes depth of focus, exposure latitude, dose-to-size E1:

1, dense to isolated feature bias, lens aberrations, arbitrary feature size bias, sidelobe printing, film loss, sidewall angle, mask error enhancement factor, linear resolution, absolute resolution or any combination thereof.

29. A machine readable medium encoded with machine executable instructions for optimizing an illumination arrangement of an illuminator according to a method comprising:

determining a plurality of illumination arrangements for a pupil plane of the illuminator, each of the plurality of illumination arrangements being determined to improve a respective lithographic performance response parameter when illuminating a mask pattern; and

adjusting an intensity of a first illumination arrangement of the plurality of illumination arrangements relative to a second illumination arrangement of the plurality of illumination arrangements, the mask pattern to be illuminated with the first and second illumination arrangements.

30. A machine readable medium according to claim 29, wherein determining a plurality of illumination arrangements comprises identifying, for each of the plurality of illumination arrangements, a region in the pupil plane for which it optimizes the optical transfer of the mask pattern.

31. A method according to claim 30, wherein adjusting an intensity of the first illumination arrangement relative to the second illumination arrangement comprises varying the region in the pupil plane of the first or second illumination arrangement.

32. A method according to claim 30, wherein adjusting an intensity of the first illumination arrangement relative to the second illumination arrangement comprises adjusting an exposure dose of the first or second illumination arrangement.

33. A method according to claim 32, wherein adjusting an exposure dose of the first or second illumination arrangement comprises determining a dose weighted average.

34. A method according to claim 29, wherein the lithographic performance response parameter includes depth of focus, exposure latitude, dose-to-size E1:

1, dense to isolated feature bias, lens aberrations, arbitrary feature size bias, sidelobe printing, film loss, sidewall angle, mask error enhancement factor, linear resolution, absolute resolution or any combination thereof.