Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

• US 20050018207A1
• Filed: 08/16/2004
• Published: 01/27/2005
• Est. Priority Date: 06/20/2000
• Status: Active Grant

• Current Assignee: Motohiko Yoshigai, Takashi Fujii, Tatehito Usui, Tetsunori Kaji
• Original Assignee: Motohiko Yoshigai, Takashi Fujii, Tatehito Usui, Tetsunori Kaji
• Inventors: Fujii, Takashi, Yoshigai, Motohiko, Usui, Tatehito, Kaji, Tetsunori
• Granted Patent: US 6,961,131 B2
• Time in Patent Office: Days
• US Class Current: 356/504
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10T 436/106664 Blood serum or blood plasma standard or control

Abstract

A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

Claims

1. :

A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;

a differential waveform pattern data base for holding a standard pattern of a differential value of an interference light with respect a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;

a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths;

a unit for obtaining a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter; and

a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value.

5. :

A film thickness measuring apparatus according to claim 1, wherein the unit for measuring the intensity of an interference light of a second member to be processed is a spectroscope, and the unit for obtaining a real pattern is a differentiator.

2. :

A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;

a differential waveform pattern data base for holding predetermined differential values of a wavelength at a zero-cross point and at least one more wavelength of an interference light with respect to a predetermined film thickness of a first member to be processed;

a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths;

a unit for obtaining a wavelength at a zero-cross point in a real pattern of a differential value of said measured interference light intensity and a differential value of a real pattern in at least one more wavelength; and

a unit for obtaining a film thickness of said second member according to matching of a wavelength at said zero-cross point between said standard pattern and said real pattern of said differential value and according to matching with a predetermined value of a differential value in at least one more wavelength.

6. :

A film thickness measuring apparatus according to claim 2, wherein the unit for measuring the intensity of an interference light of a second member to be processed is a spectroscope, and the unit for obtaining a real pattern is a differentiator.

3. :

A processing apparatus for processing a member to be processed, comprising;

a unit for setting a standard pattern of a differential value of an interference light with respect to a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;

a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths so as to obtain a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter;

a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value; and

a unit for performing the next processing according to said obtained film thickness of said second member.

4. :

An etching apparatus for etching a member to be processed placed on a sample stand by plasma in a vacuum chamber, comprising;

a unit for setting a standard pattern of a differential value of an interference light with respect to a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;

a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, so as to obtain a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter;

a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value; and

a unit for etching said second member while controlling etching conditions according to said obtained film thickness of said second member.