Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method
First Claim
1. :
- A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;
a differential waveform pattern data base for holding a standard pattern of a differential value of an interference light with respect a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;
a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths;
a unit for obtaining a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter; and
a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value.
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Accused Products
Abstract
A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
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Citations
6 Claims
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1. :
- A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;
a differential waveform pattern data base for holding a standard pattern of a differential value of an interference light with respect a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;
a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths;
a unit for obtaining a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter; and
a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value. - View Dependent Claims (5)
- A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;
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2. :
- A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;
a differential waveform pattern data base for holding predetermined differential values of a wavelength at a zero-cross point and at least one more wavelength of an interference light with respect to a predetermined film thickness of a first member to be processed;
a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths;
a unit for obtaining a wavelength at a zero-cross point in a real pattern of a differential value of said measured interference light intensity and a differential value of a real pattern in at least one more wavelength; and
a unit for obtaining a film thickness of said second member according to matching of a wavelength at said zero-cross point between said standard pattern and said real pattern of said differential value and according to matching with a predetermined value of a differential value in at least one more wavelength. - View Dependent Claims (6)
- A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising;
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3. :
- A processing apparatus for processing a member to be processed, comprising;
a unit for setting a standard pattern of a differential value of an interference light with respect to a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;
a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, with respect to each of a plurality of wavelengths so as to obtain a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter;
a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value; and
a unit for performing the next processing according to said obtained film thickness of said second member.
- A processing apparatus for processing a member to be processed, comprising;
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4. :
- An etching apparatus for etching a member to be processed placed on a sample stand by plasma in a vacuum chamber, comprising;
a unit for setting a standard pattern of a differential value of an interference light with respect to a predetermined film thickness of a first member to be processed, said standard pattern using a wavelength as a parameter;
a unit for measuring the intensity of an interference light of a second member to be processed, composed just like said first member, so as to obtain a real pattern of a differential value of said measured interference light intensity, said real pattern using a wavelength as a parameter;
a unit for obtaining a film thickness of said second member according to said standard pattern and said real pattern of said differential value; and
a unit for etching said second member while controlling etching conditions according to said obtained film thickness of said second member.
- An etching apparatus for etching a member to be processed placed on a sample stand by plasma in a vacuum chamber, comprising;
Specification