Method and apparatus for cleaning and method and apparatus for etching

• US 20050020071A1
• Filed: 07/31/2001
• Published: 01/27/2005
• Est. Priority Date: 07/31/2001
• Status: Abandoned Application

• Current Assignee: L'Air Liquide SA
• Original Assignee: L'Air Liquide SA
• Inventors: Kimura, Takako, Zils, Regis, Koruda, Yoshikuni, Sonobe, Jun, Nishikawa, Yukinobu, Ino, Minoru
• Application Number:
  US10/485,721
• Publication Number:
  US 20050020071A1
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4488 by in situ generation of reactive gas by chemical or electrochemical reaction
• CPC Class Codes: H01L 21/67063 for etching

Abstract

A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF₃. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).

Claims

1-11. -11. (canceled).

12. A cleaning method that removes a by-product material in a treating chamber of a semiconductor processing system, comprising the steps of:

i) introducing a nonfluorine first halogen gas from a first gas source;

ii) mixing a fluorine gas from a second gas source;

iii) mixing an inert gas from a third gas source;

iv) feeding the mixed gas into a reactor;

v) heating said mixed gas to a temperature at which said first halogen gas and fluorine gas react;

vi) producing an interhalogen fluorine compound gas; and

vii) feeding said compound gas concurrent with its production into said treating chamber.

13. The method according to claim 12, wherein said by-product material comprises at least one component selected from the group consisting of:

a) Si,

b) Mo,

c) Ta,

d) W,

e) SiO_x,

f) SiN_x,

g) SiON,

h) SiC,

i) SiGe,

j) TaSi_x,

k) TaO_x,

l) WSi_x,

m) TiC,

n) TiN,

o) TiW,

p) BN, and

q) ITO.

14. The method according to claim 12, wherein said mixed gas comprises said first halogen gas in the range of from about 10% to about 90% by volume, said fluorine gas in the range of from about 10% to about 90% by volume, and said inert gas in the range of from about 10% to about 90% by volume.

15. The method according to claim 12, wherein said first halogen gas is chlorine.

16. The method according to claim 12, wherein the reacting temperature of said mixed gas is in the range of about 200°

C. to about 400°

C.

17. The method according to claim 12, wherein said inert gas is helium.

18. A cleaning apparatus that removes a by-product material in a treating chamber of a semiconductor processing system that comprises:

i) an upstream section that forms a mixed gas; and

ii) a downstream section that produces an interhalogen fluorine compound gas,

wherein said mixed gas consists of a nonfluorine first halogen gas from a first gas source, a fluorine gas from a second gas source, and an inert gas from a third gas source,

wherein said interhalogen fluorine compound gas is produced by feeding said mixed gas into a reactor and heating said mixed gas to a reacting temperature, and

wherein said compound gas is fed concurrent with its production into said treating chamber.

19. The apparatus according to claim 18, wherein said by-product material comprises at least one component selected from the group consisting of:

a) Si,

b) Mo,

c) Ta,

d) W,

e) SiO_x,

f) SiN_x,

g) SiON,

h) SiC,

i) SiGe,

j) TaSi_x,

k) TaO_x,

l) WSi_x,

m) TiC,

n) TiN,

o) TiW,

p) BN, and

q) ITO.

20. The apparatus according to claim 18, wherein said upstream section further comprises:

iii) a controller,

wherein said controller can adjust the individual volumetric flow rates of said first halogen gas, said fluorine gas, and said inert gas.

21. The apparatus according to claim 18, wherein said reactor comprises:

i) a reaction chamber, and

ii) an upstream conduit,

wherein said reaction chamber and said upstream conduit are composed of a thermoconductive material that is resistant to corrosion,

wherein said upstream conduit forms a heat-exchange section by wrapping around the periphery of said reaction chamber, and

wherein said heat-exchange section is heated from the periphery by a heater.

22. An etching method for a semiconductor processing system that etches a first film on a treatment substrate comprising the steps of:

i) introducing a nonfluorine first halogen gas from a first gas source;

ii) mixing a fluorine gas from a second gas source;

iii) mixing an inert gas from a third gas source;

iv) feeding the mixed gas into a reactor;

v) heating said mixed gas to a temperature at which said first halogen gas and fluorine gas react;

vi) producing an interhalogen fluorine compound gas;

vii) feeding said compound gas concurrent with its production into said treating chamber, and

wherein said first film comprises at least one component selected from the group consisting of;

a) Si,

b) POS,

c) Ta, and

d) TaSi_x.

23. The method according to claim 22, wherein a second film is present on the treatment substrate, and

wherein said second film comprises at least one component selected from the group consisting of:

a) SiO₂,

b) SiN_x,

c) SiON,

d) TaO_x, and

e) photoresists.

24. The method according to claim 23, wherein said etching method etches the first film relative to the second film.

25. An etching apparatus for a semiconductor processing system that etches a first film on a treatment substrate, comprising:

i) a treating chamber that holds said treatment substrate;

ii) an upstream section that forms a mixed gas; and

iii) a downstream section that produces an interhalogen fluorine compound gas,

wherein said mixed gas consists of a nonfluorine first halogen gas from a first gas source, a fluorine gas from a second gas source, and an inert gas from a third gas source,

wherein said interhalogen fluorine compound gas is produced by feeding said mixed gas into a reactor and heating said mixed gas to a reacting temperature,

wherein said compound gas is fed concurrent with its production into said treating chamber, and

wherein said first film substantially comprises at least one component selected from the group consisting of;

a) Si,

b) SIPOS,

c) Ta, and

d) TaSi_x.

26. The apparatus according to claim 25, wherein said etching apparatus comprises:

i) a reaction chamber; and

ii) an upstream conduit,

wherein said reaction chamber and said upstream conduit are composed of a thermoconductive material that is resistant to corrosion,

wherein said upstream conduit forms a heat-exchange section by wrapping around the periphery of said reaction chamber, and

wherein said heat-exchange section is heated from the periphery by a heater.