Gas sensor with sensing particle receptacles

• US 20050023138A1
• Filed: 08/27/2004
• Published: 02/03/2005
• Est. Priority Date: 09/03/2003
• Status: Abandoned Application

• Current Assignee: Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hon Hai Precision Industry Co., Ltd.
• Inventors: Huang, Chuan-De, Huang, Wen-Jeng
• Application Number:
  US10/927,806
• Publication Number:
  US 20050023138A1
• Time in Patent Office: Days
• US Class Current: 204/426
• CPC Class Codes: G01N 33/0031 comprising two or more sensors, e.g. a sensor array electrochemical electrode arrays G01N27/27

Abstract

A gas sensor (3) includes an insulating substrate (31), two electrodes (33, 35) formed thereon, and a sensing layer (37) formed on the insulating substrate and the electrodes. Each electrode defines a plurality of receptacles (332, 352) adjacent a surface thereof The sensing layer contains a plurality of sensing particles (372). A portion of the sensing particles is received in the receptacles. The sensing particles are physically divided into several connected parts by the receptacles, and accordingly are highly dispersed. Thereby, more spaces among the sensing particles are provided, for improving the sensitivity of the gas sensor.

Claims

1. A gas sensor comprising:

an insulating substrate;

two electrodes formed on the insulating substrate, each electrode defining a plurality of receptacles adjacent a surface thereof; and

a sensing layer containing a plurality of sensing particles, the sensing layer formed on the insulating substrate and the surfaces of the electrodes, a portion of the sensing particles being received in at least one of the receptacles.

2. The gas sensor as claimed in claim 1, wherein, the sensing particles comprise materials selected from the group consisting of tin oxide, wolframium oxide, and zinc oxide.

3. The gas sensor as claimed in claim 1, wherein the sensing particles are sized in the range from 5 nanometers to 100 nanometers.

4. The gas sensor as claimed in claim 1, wherein the receptacles are blind holes or channels.

5. The gas sensor as claimed in claim 1, wherein a ratio of an average depth of the receptacles to an average width of the receptacles is approximately ten.

6. The gas sensor as claimed in claim 1, wherein a ratio of an average width of the receptacles to an average size of the sensing particles is in the range from 2 to 3.

7. The gas sensor as claimed in claim 1, wherein a material of the insulating substrate is selected from the group consisting of quartz, a ceramic material, and silicon nitride.

8. The gas sensor as claimed in claim 1, further comprising a heating device adjacent the insulating substrate.

9. The gas sensor as claimed in claim 1, wherein the receptacles are formed in the surfaces of the electrodes by etching or lithography.

10. A gas sensor comprising:

an insulating substrate having a plurality of receptacles formed in a surface thereof;

two electrodes formed on the insulating substrate and covering inner surfaces of the receptacles; and

a sensing layer containing a plurality of sensing particles, the sensing layer formed on the insulating substrate and covering surfaces of the electrodes, a portion of the sensing particles being received in at least one of the receptacles.

11. The gas sensor as claimed in claim 10, wherein the sensing particles are selected from the group consisting of tin oxide, wolframium oxide, and zinc oxide.

12. The gas sensor as claimed in claim 10, wherein the sensing particles are sized in the range from 5 nanometers to 100 nanometers.

13. The gas sensor as claimed in claim 10, wherein the receptacles are blind holes or channels.

14. The gas sensor as claimed in claim 10, wherein a ratio of an average depth of the receptacles to an average width of the receptacles is approximately ten.

15. The gas sensor as claimed in claim 10, wherein a ratio of an average width of the receptacles to an average size of the sensing particles is in the range from 2 to 3.

16. The gas sensor as claimed in claim 10, wherein a material of the insulating substrate is selected from the group consisting of quartz, a ceramic material, and silicon nitride.

17. The gas sensor as claimed in claim 10, further comprising a heating device adjacent the insulating substrate.

18. The gas sensor as claimed in claim 10, wherein the receptacles are formed in the surfaces of the electrodes by etching or lithography.

19. A gas sensor comprising:

an insulating substrate;

two electrodes formed on the insulating substrate and cooperating with the insulating substrate to define a plurality of receptacles; and

a sensing layer having a plurality of sensing particles, the sensing layer formed on the insulating substrate and covering at least parts of surfaces of the electrodes at the receptacles, with at least a portion of the sensing particles being received in at least one of the receptacles.