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SEMICONDUCTOR LIGHT EMITTING DEVICES

  • US 20050023549A1
  • Filed: 08/01/2003
  • Published: 02/03/2005
  • Est. Priority Date: 08/01/2003
  • Status: Active Grant
First Claim
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1. A III-nitride light emitting device comprising:

  • a first layer of first conductivity type;

    a first layer of second conductivity type;

    an active region;

    a tunnel junction, the tunnel junction comprising;

    a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and

    a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;

    a third layer of first conductivity type;

    a first contact electrically connected to the first layer of first conductivity type; and

    a second contact electrically connected to the third layer of first conductivity type;

    wherein;

    the first and second contacts comprise the same material;

    the first and second contact material has a reflectivity to light emitted by the active region greater than 75%;

    the active region is disposed between a layer of first conductivity type and a layer of second conductivity type; and

    the tunnel junction is disposed between the first layer of first conductivity type and the third layer of first conductivity type.

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