SEMICONDUCTOR LIGHT EMITTING DEVICES
First Claim
1. A III-nitride light emitting device comprising:
- a first layer of first conductivity type;
a first layer of second conductivity type;
an active region;
a tunnel junction, the tunnel junction comprising;
a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and
a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;
a third layer of first conductivity type;
a first contact electrically connected to the first layer of first conductivity type; and
a second contact electrically connected to the third layer of first conductivity type;
wherein;
the first and second contacts comprise the same material;
the first and second contact material has a reflectivity to light emitted by the active region greater than 75%;
the active region is disposed between a layer of first conductivity type and a layer of second conductivity type; and
the tunnel junction is disposed between the first layer of first conductivity type and the third layer of first conductivity type.
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Accused Products
Abstract
A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.
55 Citations
50 Claims
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1. A III-nitride light emitting device comprising:
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a first layer of first conductivity type;
a first layer of second conductivity type;
an active region;
a tunnel junction, the tunnel junction comprising;
a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and
a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;
a third layer of first conductivity type;
a first contact electrically connected to the first layer of first conductivity type; and
a second contact electrically connected to the third layer of first conductivity type;
wherein;
the first and second contacts comprise the same material;
the first and second contact material has a reflectivity to light emitted by the active region greater than 75%;
the active region is disposed between a layer of first conductivity type and a layer of second conductivity type; and
the tunnel junction is disposed between the first layer of first conductivity type and the third layer of first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A III-nitride light emitting device comprising:
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a first layer of first conductivity type;
a first layer of second conductivity type;
an active region;
a tunnel junction, the tunnel junction comprising;
a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and
a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type; and
a textured layer overlying the tunnel junction;
wherein the active region is disposed between a layer of first conductivity type and a layer of second conductivity type. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A III-nitride light emitting device comprising:
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a substrate having a first surface and a second surface opposite the first surface;
a layer of first conductivity type formed on the first surface;
a layer of second conductivity type;
an active region disposed between the layer of first conductivity type and the layer of second conductivity type; and
a textured layer formed on the second surface. - View Dependent Claims (45, 46, 47, 48, 49, 50)
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Specification