High-voltage vertical transistor with a multi-layered extended drain structure
First Claim
1. A vertical high-voltage transistor comprising:
- a drain region of a first conductivity type;
at least one source region of the first conductivity type;
at least one body region of a second conductivity type opposite to the first conductivity type, the at least one body region adjoining the source region;
a plurality of drift regions of the first conductivity type arranged in parallel and extending in a first direction from the drain region to the at least one body region, adjacent ones of the drift regions being separated in a second direction orthogonal to the first direction by a dielectric layer;
at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions; and
an insulated gate disposed between the at least one field plate member and the at least one body region, with a channel region being defined in the at least one body region adjacent the insulated gate between the at least one source region and at least one of the drift regions.
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Abstract
A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage transistor structure having a stand-alone drift region.
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Citations
28 Claims
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1. A vertical high-voltage transistor comprising:
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a drain region of a first conductivity type;
at least one source region of the first conductivity type;
at least one body region of a second conductivity type opposite to the first conductivity type, the at least one body region adjoining the source region;
a plurality of drift regions of the first conductivity type arranged in parallel and extending in a first direction from the drain region to the at least one body region, adjacent ones of the drift regions being separated in a second direction orthogonal to the first direction by a dielectric layer;
at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions; and
an insulated gate disposed between the at least one field plate member and the at least one body region, with a channel region being defined in the at least one body region adjacent the insulated gate between the at least one source region and at least one of the drift regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A vertical high-voltage transistor comprising:
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a drain region of a first conductivity type;
a plurality of body regions of a second conductivity type opposite to the first conductivity type;
a plurality of drift regions of the first conductivity type, each of the drift regions extending in a first direction from the drain region to one or more of the body regions;
field plate members that extend in the first direction, each of the field plate members being spaced-apart in a second direction and insulated from the drift regions by a dielectric layer;
a plurality of source regions of the first conductivity type, each of the source regions adjoining one of the body regions;
at least one insulated gate member disposed above each body region, thereby defining a channel region that extends in the second direction from one of the source regions to one of the drift regions. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A vertical high-voltage transistor comprising:
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a substrate;
a source region of a first conductivity type;
a drift region of the first conductivity type that extends in a vertical direction to connect the source region to the substrate, the drift region having first and second sidewalls;
first and second dielectric layers disposed along the first and second sidewalls, respectively;
first and second field plate members that respectively extend in the vertical direction adjacent to the first and second dielectric layers, the first and second dielectric layers insulating the first and second field plate members from the first and second sidewalls, respectively, each of the first and second field plate members being insulated from the substrate and oriented in parallel with the first and second sidewalls, respectively;
a source electrode electrically connected to the source region; and
a drain electrode electrically connected to the substrate, current flowing vertically from the source electrode, through the source region, the drift region, and the substrate, to the drain electrode when the vertical high-voltage transistor operates in an on-state, the drift region being pinched-off when the vertical high-voltage transistor operates in an off-state. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification