Semiconductor device and method
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate; and
a dielectric layer formed over the semiconductor substrate and having a first portion formed with an amorphous material and a second portion formed with a monocrystalline material, where an electric field in the dielectric layer controls a conductivity of the semiconductor substrate.
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Abstract
Circuit (10) has a dual layer gate dielectric (29) formed over a semiconductor substrate (14). The gate dielectric includes an amorphous layer (40) and a monocrystalline layer (42). The monocrystalline layer typically has a higher dielectric constant than the amorphous layer.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; and
a dielectric layer formed over the semiconductor substrate and having a first portion formed with an amorphous material and a second portion formed with a monocrystalline material, where an electric field in the dielectric layer controls a conductivity of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5)
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6. The semiconductor device of claim I, wherein the monocrystalline material includes a material selected from the group consisting of barium, strontium, titanium, lanthanum, zirconium, aluminum and oxygen.
- 7. The semiconductor device of claim I, wherein the first portion of the dielectric layer has a relative permittivity less than ten and the second portion of the dielectric layer has a relative permittivity greater than thirty.
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9. A transistor, comprising:
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a substrate;
a gate electrode disposed over the substrate for generating a conduction channel in the substrate in response to a control signal; and
a dielectric formed over the conduction channel, the dielectric including a first layer formed with an amorphous material, a second layer formed with a monocrystalline material disposed between the first layer and the gate electrode. - View Dependent Claims (10, 11, 12, 13)
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14. A method of operating a transistor, comprising the steps of:
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providing a gate dielectric overlying a semiconductor substrate; and
applying a control signal to generate a first field in an amorphous layer of the gate dielectric and a second field in a monocrystalline layer of the gate dielectric. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification