Atomic layer-deposited HfAlO3 films for gate dielectrics
First Claim
1. A transistor comprising:
- a body region between a first and a second source/drain region;
a dielectric film containing atomic layer deposited HfAlO3 disposed on the body region between the first and second source/drain regions; and
a gate coupled to the dielectric film.
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Accused Products
Abstract
A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition employing a hafnium sequence and an aluminum sequence. The hafnium sequence uses HfCl4 and water vapor. The aluminum sequence uses either trimethylaluminium, Al(CH3)3, or DMEAA, an adduct of alane (AlH3) and dimethylehtylamine [N(CH3)2(C2H5)], with distilled water vapor. These gate dielectrics containing a HfAlO3 film are thermodynamically stable such that the HfAlO3 film will have minimal reactions with a silicon substrate or other structures during processing.
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Citations
26 Claims
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1. A transistor comprising:
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a body region between a first and a second source/drain region;
a dielectric film containing atomic layer deposited HfAlO3 disposed on the body region between the first and second source/drain regions; and
a gate coupled to the dielectric film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A transistor comprising:
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a body region between a first and a second source/drain region;
a film containing HfAlO3 on the body region between the first and second source/drain regions; and
a gate coupled to the film;
the film formed by atomic layer deposition including;
pulsing a hafnium containing precursor into a reaction chamber containing a substrate;
pulsing a first oxygen containing precursor into the reaction chamber;
pulsing an aluminum containing precursor into a reaction chamber; and
pulsing a second oxygen containing precursor into the reaction chamber. - View Dependent Claims (10, 11, 12)
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13. A memory having a memory array comprising:
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a number of access transistors, each access transistor including a gate coupled to a film containing HfAlO3, the film formed on a body region between a first and a second source/drain regions;
a number of word lines coupled to a number of the gates of the number of access transistors;
a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and
a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors;
the film formed by atomic layer deposition including;
pulsing a hafnium containing source gas into a reaction chamber containing a substrate;
pulsing an aluminum containing source gas into the reaction chamber. - View Dependent Claims (14, 15, 16)
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17. A memory having a memory array comprising:
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a number of access transistors, each access transistor including a gate coupled to a film containing atomic layer deposited HfAlO3, the film disposed on a body region between a first and a second source/drain regions;
a number of word lines coupled to a number of the gates of the number of access transistors;
a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and
a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors. - View Dependent Claims (18, 19)
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20. An electronic system comprising:
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a processor;
a memory, the memory having an array including;
a number of access transistors, each access transistors having a gate coupled to a film containing HfAlO3, the film formed on a body region between a first and a second source/drain regions;
a number of word lines coupled to a number of the gates of the number of access transistors;
a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors; and
a system bus that couples the processor to the memory array;
the HfAlO3 formed by atomic layer deposition including;
pulsing a hafnium containing source gas into a reaction chamber containing a substrate; and
pulsing an aluminum containing source gas into a reaction chamber. - View Dependent Claims (21, 22, 23)
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24. An electronic system comprising:
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a processor; and
a memory, the memory having an array including;
a number of access transistors, each access transistors having a gate coupled to a film containing atomic layer deposited HfAlO3, the film disposed on a body region between a first and a second source/drain regions;
a number of word lines coupled to a number of the gates of the number of access transistors;
a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors; and
a system bus that couples the processor to the memory array. - View Dependent Claims (25, 26)
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Specification