Low-temperature silicon nitride deposition

• US 20050025885A1
• Filed: 07/30/2003
• Published: 02/03/2005
• Est. Priority Date: 07/30/2003
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Goodner, Michael D., McSwiney, Michael L.
• Granted Patent: US 7,125,582 B2
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/345 Silicon nitride

Abstract

A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

Claims

1. A method comprising:

combining a specific silicon source precursor and a nitrogen source precursor at a temperature up to 550°

C.; and

forming a silicon nitride film.

2. The method of claim 1, wherein the silicon source precursor comprises an aminosilane with at least one diamine ligand.

3. The method of claim 2, wherein the aminosilane has the general formula:

4. The method of claim 2, wherein the aminosilane has the general formula:

Si(NRC_xH_yNR)_aH_4-2a,

where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,

where x is an integer greater than or equal to one,

where y is an integer greater than or equal to two, and

where a is one or two.

5. The method of claim 1, wherein the silicon source precursor comprises a halogenated aminosilane.

6. The method of claim 5, wherein the aminosilane has the general formula:

Si(NR)_xR_yX_z,

where X is a halogen,

where x is an integer greater than or equal to one,

where y is an integer greater than or equal to zero,

where z is an integer greater than or equal to one, and

where the sum of x, y, and z is four.

7. The method of claim 1, wherein the silicon source precursor comprises a silazane.

8. The method of claim 1, wherein the silicon source precursor comprises a cyclic silazane.

9. The method of claim 1, wherein the silicon source precursor comprises a silyl moiety.

10. The method of claim 9, wherein the silyl moiety comprises at least one of a saturated silyl alkyl and an unsaturated silyl alkyl.

11. The method of claim 1, wherein the silicon source precursor comprises an azidosilane.

12. The method of claim 1, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.

13. A method comprising:

combining a silicon source precursor and a nitrogen source precursor; and

forming a silicon nitride film,

wherein the silicon source precursor is selected from the group consisting of at least one of an aminosilane with at least one diamine ligand, a halogenated aminosilane, a silazane, a saturated or unsaturated silyl alkyl, and an azidosilane.

14. The method of claim 13, wherein the aminosilane has the general formula:

15. The method of claim 13, wherein the aminosilane has the general formula:

Si(NRC_xH_yNR)_aH_4-2a,

where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,

where x is an integer greater than or equal to one,

where y is an integer greater than or equal to two, and

where a is one or two.

16. The method of claim 13, wherein the silicon source precursor comprises a halogenated aminosilane, having the general formula:

Si(NR)_xR_yX_z,

where X is a halogen,

where x is an integer greater than or equal to one,

where y is an integer greater than or equal to zero,

where z is an integer greater than or equal to one, and

where the sum of x, y, and z is four.

17. The method of claim 13, wherein the silicon source precursor comprises a cyclic silazane.

18. The method of claim 13, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.

19. A method comprising:

combining a silicon source precursor and a nitrogen source precursor in a deposition chamber, wherein the silicon source precursor comprises a material having a property that will, in combination with the nitrogen source precursor, form a silicon nitride film at a temperature up to 550°

C.; and

forming a silicon nitride film.

20. The method of claim 19, wherein the silicon source precursor comprises an aminosilane with at least one diamene ligand.

21. The method of claim 20, wherein the aminosilane has the general formula:

22. The method of claim 20, wherein the aminosilane has the general formula:

Si(NRC_xH_yNR)_aH_4-2a,

where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,

where x is an integer greater than or equal to one,

where y is an integer greater than or equal to two, and

where a is one or two.

23. The method of claim 19, wherein the silicon source gas comprises a halogenated aminosilane.

24. The method of claim 23, wherein the aminosilane has the general formula:

Si(NR)_xR_yX_z,

where X is a halogen,

where x is an integer greater than or equal to one,

where y is an integer greater than or equal to zero,

where z is an integer greater than or equal to one, and

where the sum of x, y, and z is four.

25. The method of claim 19, wherein the silicon source precursor comprises a silazane.

26. The method of claim 19, wherein the silicon source precursor comprises a cyclic silazane.

27. The method of claim 19, wherein the silicon source precursor comprises a silyl moiety.

28. The method of claim 27, wherein the silyl moiety comprises at least one of a silyl alkyl and a silyl alkylene.

29. The method of claim 19, wherein the silicon source precursor comprises an azidosilane.

30. The method of claim 19, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.

31. A system comprising:

a chamber;

a silicon source precursor coupled to the chamber;

a controller configured to control the introduction into the chamber of a silicon gas from the silicon gas source; and

a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program comprising;

instructions for controlling the second source precursor to introduce an effective amount of silicon gas into the chamber at a temperature up to 550°

C.

32. The system of claim 31, wherein the system further comprises a nitrogen source precursor coupled to the chamber and the controller is configured to control the introduction of the nitrogen precursor from the nitrogen precursor source.

33. The system of claim 31, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.

34. The system of claim 31, wherein the silicon precursor comprises a material selected from the group consisting of an aminosilane with at least one diamene ligand, a halogenated aminosilane, a silazane, a cyclic silazane, a silyl hydrocarbon, and an azidosilane.