Techniques for curvature control in power transistor devices
First Claim
1. A method for controlling curvature of a power transistor device comprising a device film formed on a substrate, the method comprising the steps of:
- thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step; and
applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device.
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Accused Products
Abstract
Techniques for processing power transistor devices are provided. In one aspect, the curvature of a power transistor device comprising a device film formed on a substrate is controlled by thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step, and applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device. The resultant power transistor device may be part of an integrated circuit.
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Citations
16 Claims
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1. A method for controlling curvature of a power transistor device comprising a device film formed on a substrate, the method comprising the steps of:
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thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step; and
applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A power transistor device comprising:
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a substrate; and
a device film formed on the substrate, the device having an overall residual stress attributable at least in part to a thinning process applied to the substrate;
wherein the power transistor device further comprises a stress compensation layer formed on a surface of the device film, the stress compensation layer having a tensile stress that counterbalances at least a portion of the overall residual stress of the device. - View Dependent Claims (14, 15)
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16. An integrated circuit, comprising:
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at least one power transistor device comprising a substrate and a device film formed on the substrate, the device having an overall residual stress attributable at least in part to a thinning process applied to the substrate;
wherein the power transistor device further comprises a stress compensation layer formed on a surface of the device film, the stress compensation layer having a tensile stress that counterbalances at least a portion of the overall residual stress of the device.
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Specification