Method of manufacturing semiconductor device and display device
First Claim
1. A method of manufacturing a semiconductor device comprising steps of:
- forming an insulating film over a substrate;
forming an opening in the insulating film;
dropping a liquid droplet containing a conductive composition by droplet discharging method over the substrate, thereby a wiring is formed on a position including at least the opening; and
performing a heat treatment, thereby a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled over the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.
51 Citations
42 Claims
-
1. A method of manufacturing a semiconductor device comprising steps of:
-
forming an insulating film over a substrate;
forming an opening in the insulating film;
dropping a liquid droplet containing a conductive composition by droplet discharging method over the substrate, thereby a wiring is formed on a position including at least the opening; and
performing a heat treatment, thereby a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled over the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of manufacturing a semiconductor device comprising steps of:
-
forming an insulating film over a substrate;
forming an opening in the insulating film;
dropping a liquid droplet containing a conductive composition by droplet discharging method over the substrate, thereby a wiring is formed on a position including at least the opening; and
performing a heat treatment, thereby the opening is filled with the wiring. - View Dependent Claims (12, 13, 16, 17, 18, 19, 20)
-
-
14. A method according to claim 14, further comprising a step of:
- forming a partition wall over the substrate prior to dropping the liquid droplet, thereby the wiring formed by droplet discharging method is formed inside of the partition wall.
- View Dependent Claims (15)
-
21. A method of manufacturing a semiconductor device comprising steps of:
-
forming an insulating film over a substrate;
forming an opening in the insulating film;
dropping a liquid droplet containing a conductive composition by droplet discharging method over the substrate, thereby a wiring is formed on a position including at least the opening; and
performing a heat treatment, thereby a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled over the substrate and the opening is filled with the wiring. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
-
-
31. A method of manufacturing a semiconductor device comprising steps of:
-
forming a thin film transistor over a substrate;
forming an insulating film over the thin film transistor;
forming an opening in the insulating film;
dropping a liquid droplet containing a conductive composition by droplet discharging method over the substrate, thereby a wiring is formed on a position including at least the opening and connected to the thin film transistor;
performing a heat treatment;
forming a pixel electrode over the insulating film and the wiring, the pixel electrode connected to the wiring. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
-
Specification